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Method for prolonging life span of mixing and interconnecting indium welding spot of infrared focal plane array device

An infrared focal plane and solder joint technology, which is applied in the field of photodetection device manufacturing process, can solve the problems of extremely high wettability requirements for metallized electrodes and hybrid interconnection indium solder joints, poor performance of infrared focal plane detectors, and difficult processes. , to achieve the effect of realizing electrical connection life, not affecting the detection performance of the device, and simple and convenient operation

Inactive Publication Date: 2010-06-02
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the hybrid interconnection technologies of these two infrared focal plane detectors have extremely high requirements on the wettability of the metallized electrodes and the indium solder joints of the hybrid interconnection, and there are great difficulties in the realization process
Moreover, during the entire hybrid interconnection process, the high-temperature reflow treatment of indium solder joints higher than the melting point of indium solder joints will have a negative impact on the performance of infrared focal plane detectors

Method used

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  • Method for prolonging life span of mixing and interconnecting indium welding spot of infrared focal plane array device
  • Method for prolonging life span of mixing and interconnecting indium welding spot of infrared focal plane array device

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Embodiment Construction

[0019] Below in conjunction with the accompanying drawings, the specific implementation of the present invention will be further described in detail by taking an infrared focal plane detector with a size of 320×240 as an example:

[0020] A. Using the method of double ion beam coating, the bases 105 and 201 for growing the indium-stacked bridge piers 3 are respectively prepared at the four corners of the infrared focal plane photosensitive array chip 1 and the readout circuit 2, and the base size is 640000 μm 2 , the base material is a chromium / gold composite layer (Cr / Au) that is wettable with the indium pile pier 3, the thickness of chromium is 50nm, and the thickness of gold is 200nm;

[0021] B. Using traditional photolithography technology, on the surface of the infrared focal plane photosensitive array chip 1 and the readout circuit 2, a photoresist mask for growing the hybrid interconnected indium pad array 104 and the indium-stacked bridge pier 3 is fabricated Pattern,...

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Abstract

The invention discloses a method for prolonging the life span of a mixing and interconnecting indium welding spot of an infrared focal plane array device, and relates to the technical technology of photoelectric detector manufacturing. Four indium stack piers are added at the four corners of an infrared focal plane detector in a conventional structure to realize the mixing and interconnecting indium welding spot of the infrared focal plane detector in a conventional structure and synchronously be used as a technical scheme for separating the dual functions of mechanical connection and electrical connection, thereby effectively solving the problem that the mixing and interconnecting indium welding spot limits the service life of the infrared focal plane array device because of the circular impact fatigue of cold and hot temperature. The invention has the characteristics of simple and convenient operation and no influence on the detection performance of the device without high temperature treatment.

Description

technical field [0001] The invention relates to a manufacturing process technology of a photoelectric detection device, in particular to a method for improving the service life of an indium solder joint of a hybrid interconnection between an infrared light-sensitive array chip and a readout circuit. Background technique [0002] The infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. It consists of an infrared light-sensitive array chip and its corresponding silicon readout circuit. Since metal indium can maintain good ductility at low temperature even at liquid helium temperature, and it is convenient to prepare large-area indium pad array at room temperature, the infrared focal plane detector usually adopts the method of indium pad interconnection Integrate the infrared photosensitive array chip and the readout circuit together. [0003] The indium solder joint interconnection of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/02
Inventor 叶振华尹文婷黄建王建新朱建妹林春张勤耀胡晓宁丁瑞军何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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