Method for preparing absorbing layer of thin film solar cell

Abstract

The invention relates to a method for preparing an absorbing layer of a thin film solar cell, belonging to the technical fields of photoelectric functional material and new energy. The method is characterized in that a Cu-In-Se absorbing layer, a Cu-In-Ga-Se absorbing layer or a Cu-In-Al-Se absorbing layer is prepared by a vacuum magnetron sputtering method; a Cu-In-Se alloy target, a Cu-In-Ga-Se alloy target or a Cu-In-Al-Se alloy target is directly used, and the components of the absorbing layer are controlled by the components of the target; and the film formation quality is controlled by the sputtering technology. The absorbing layer prepared by the magnetron sputtering method can be subsequently treated by annealing in the protection atmosphere, so that the crystallization quality is further improved. The absorbing layer prepared by the method is formed by uniform Cu-In-Se phase, Cu-In-Ga-Se phase or Cu-In-Al-Se phase, so that the component distribution is even, and the components of the absorbing layer are consistent with the components of the target. The method is simple and convenient in technique, easy to control and lower in matrix temperature when in deposition, can select multiple substrates, and ids suitable for industrialized production.

Description

technical field [0001] The invention relates to a thin-film solar cell preparation technology, in particular to a preparation method for an absorbing layer of a copper indium selenium, copper indium gallium selenium, and copper indium aluminum selenium thin film solar cell, and belongs to the technical field of photoelectric functional materials and new energy sources. Background technique [0002] Copper-indium-selenium-based thin-film solar cells have the characteristics of high efficiency, low cost, no performance degradation, long life, and flexible substrates, and are currently one of the mainstream technologies in the field of solar cells. CuInSe with chalcopyrite structure 2 (CIS) The bandgap width is 1.04eV; Doping an appropriate amount of Ga in CIS instead of In, the formed CuIn 1-x Ga x Se 2 (CIGS) The bandgap width can be continuously adjusted in the range of 1.04-1.67eV; doping an appropriate amount of Al partly replaces In, and the formed CuIn 1-x al x Se ...

AI Technical Summary

Problems solved by technology

However, the selenization process is difficult to control and may use the highly toxic gas H 2 Se