BiFeO3 film resistor memory structure and preparation method thereof

A thin film resistor and memory technology, applied in electrical components and other directions, to achieve the effects of good density, easy control of chemical composition, and simple operation

Inactive Publication Date: 2010-06-09
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

BiFeO has not been seen in the prior art 3 Report

Method used

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  • BiFeO3 film resistor memory structure and preparation method thereof
  • BiFeO3 film resistor memory structure and preparation method thereof
  • BiFeO3 film resistor memory structure and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0028] Example 1 Preparation of BiFeO 3 Storage device

[0029] (1) Preparation of BiFeO 3 Sol: fully mix diethanolamine with a small amount of ethylene glycol methyl ether, heat it to boiling, and cool it naturally to obtain mixed solution A; add Fe(NO 3 ) 3 .5H 2 After O is dissolved in ethylene glycol methyl ether at room temperature, add Bi(NO 3 ) 3 .9H 2 O, heat to 80°C for 1 h, and cool to room temperature to obtain mixed solution B. At room temperature, drop the mixed solution A into the mixed solution B, adjust the concentration to 0.2mol / L, stir well for 2-4h, filter, and cool to obtain the precursor solution.

[0030] (2) Preparation of BiFeO 3 Thin film: BiFeO 3 Precursor fluid in LaNiO 3 On the covered Si substrate, spin coating is used to prepare a thin film with six layers. Adjust the glue rejection parameters and time, and each layer of wet film is pretreated on the hot plate. The spin-off parameters can be 3000 rpm, the time is 30 seconds, the pretreatment temperat...

Example Embodiment

[0033] Example 2

[0034] (1)BiFeO 3 The preparation of the film and the device is the same as in Example 1 (1) and (2).

[0035] (2) The above BiFeO 3 The film is heat-treated at a temperature of 500°C and a constant temperature for 30 minutes. In this way, perfect crystalline and dense BiFeO can be obtained 3 Thin film without Bi 2 Fe 4 O 9 And other miscellaneous phases.

[0036] (3)BiFeO 3 The production of the surface electrode is the same as the step (4) of Example 1.

Example Embodiment

[0037] Example 3

[0038] (1)BiFeO 3 The configuration of the solution is the same as the step (1) of Example 1.

[0039] (2) Preparation of BiFeO 3 Thin film: BiFeO 3 Precursor liquid in clean Pt / TiO 2 / SiO 2 / Si substrate, the thin film is prepared by spin coating, the number of layers is six. Adjust the glue rejection parameters and time, and each layer of wet film is pretreated on the hot plate. The spin parameters are 3000 rpm, the time is 30 seconds, the pretreatment temperature of each layer is 350°C, and the time is 5 minutes. Repeat the process of spinning-pretreatment-spinning again to get a certain thickness of BiFeO 3 Thin film (200-300nm). .

[0040] (3)BiFeO 3 The heat treatment of the film and the production of the upper surface electrode are the same as the steps (3) and (4) of Example 1.

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Abstract

The invention provides an integrated circuit comprising a BiFeO3 film resistor memory, which is characterized in that: the integrated circuit comprises a Si substrate covered by a LaNiO3 electrode, a Pt/TiO2/SiO2/Si substrate, a BiFeO3 film formed on the LaNiO3 and Pt base electrode, and a plurality of surface electrodes on the surface of the BiFeO3 film; and the surface electrodes comprise Pt, Au and Ag metal electrodes. The BiFeO3 film memory provided by the invention has excellent resistance switch characteristics, and the preparation process for the BiFeO3 film memory can be compatible with a CMOS process. The preparation method for the film maintains the characteristics of simple operation, low cost, easy control of chemical compositions and the like of a sol-gel method, and the prepared film has the advantages of no crack, good compactness and uniform grain distribution.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a BiFeO 3 Thin film resistive memory structure and its preparation method. Background technique [0002] At present, some oxide materials such as NiO, TiO 2 、Pr x Ca 1-x MnO3, SrZrO 3 The resistive switching characteristics, that is, the switching characteristics between two different resistance states, have attracted much attention, and the memory devices developed by using this characteristic have low operating current, low driving voltage, high stability, fast storage speed, and large storage capacity. And other technical advantages, is expected to become a new generation of non-volatile memory. [0003] However, different material systems have different storage properties and storage mechanisms. Among these materials, BiFeO 3 It is a multifunctional material with a simple perovskite structure. It has both ferroelectric order and ferromagnetic order at room tempe...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 陈心满石旺舟包定华王涛
Owner SHANGHAI NORMAL UNIVERSITY
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