Copper alloy target, manufacturing method thereof and film and solar cell manufactured by same

Abstract

The invention relates to a method for manufacturing copper alloy target, which comprises the following steps: forming a target preform; carrying out thermo-mechanical treatment or thermal annealing treatment in a range of between 500 and 850 DEG C on the target preform to ensure that the area of a compound in the manufactured target is less than 25 percent of the whole target area. The invention relates to the copper alloy target and a film which is formed by sputtering the copper alloy target, and a solar cell which comprises the film. The copper alloy target with a (near) homogeneous structure can be applied in the sputtering process to prevent the phenomenon of micro-arc induction, ensures equal sputtering speed of each position on the target surface because of the (near) homogeneous structure, and promotes uniform components of the formed film so as to improve the quality and yield of the film.

Description

technical field [0001] The invention relates to a copper alloy target material, especially a copper-gallium target material containing complete components and nearly single-phase, which can improve film quality and yield. Background technique [0002] In today's era of increasingly scarce fossil fuels, the application of alternative energy sources is becoming more and more important. Among them, solar cells, which can provide low-cost and endless power, are the most promising. The types of solar cells can generally be divided into wafer type and thin film type. Although silicon chip solar cells are currently the mainstream in the market, their principle of light absorption is indirect energy gap (indirect energy gap), requiring thicker silicon materials as the absorber (absorber), and there is currently a serious shortage of upstream silicon raw materials. Therefore, the copper-indium-gallium-selenide (Cu-In-Ga-Se, CIGS) solar cell among thin-film solar cells has become one...

AI Technical Summary

Problems solved by technology

[0005] At present, the copper indium gallium or copper gallium target produced by general vacuum melting technology (VIM) has a microstructure of a eutectoid structure composed of a solid solution phase and a compound phase, and the area of ​​the compound phase accounts for 30-40% of the overall target area. , the disadvantages of this microstructure are: (1) the target material is prone to macroscopic or microscopic component segregation due to the uneven distribution of the structure; (2) the difference in sputtering efficiency of different alloy phases may lead to uneven composition and properties of the film. Poor; (3) Different alloy phases may induce microarcing during the sputtering process, thereby affecting the film quality

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