Ultraviolet light image sensor and manufacturing method thereof
An image sensor and ultraviolet light technology, which is applied in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve the problems of lower detection efficiency, high production cost, and unsatisfactory dynamic performance, and achieve simple structure and low production cost. low cost effect
Active Publication Date: 2011-12-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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But because the light is divergent to the surrounding when the phosphorescent substance emits light, only the downward part is effective, which will reduce the detection efficiency
At the same time, the response of phosphorescent substances to light is delayed, so the dynamic performance is not ideal
[0004] 2. Ultraviolet image sensors made of gallium nitride and other materials have excellent performance, but the production cost is much higher than that of silicon substrates
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[0016] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0017] The invention utilizes the different absorption coefficients of different materials for ultraviolet light in the integrated circuit manufacturing process to distinguish ultraviolet light signals to manufacture an ultraviolet light image sensor. Both silicon nitride and silicon dioxide are commonly used materials in the integrated circuit manufacturing industry. Silicon nitride has a high absorption coefficient for ultraviolet light (such as 10000 angstrom silicon nitride absorbs 99% of ultraviolet light), while silicon dioxide has a much smaller absorption coefficient for ultraviolet light (such as 10000 angstrom The absorption rate of silica to ultraviolet light is less than 1%). Current optical sensors on silicon substrates are sensitive to both visible and ultraviolet light. The invention utilizes the difference in the absorption c...
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The invention discloses an ultraviolet light image sensor, which comprises a silicon substrate, a circuit and a photosensitive element on the silicon substrate, a metal layer for connecting the photosensitive element, an insulating medium layer for metal interconnection isolation, and a A passivation layer for circuit protection and insulation, with a silicon nitride layer above one of the two adjacent sensors in a pixel to form a UV filter. The invention utilizes the difference in the absorption coefficients of silicon nitride and silicon dioxide for ultraviolet rays on the optical sensor to make an ultraviolet light filter. The ultraviolet image sensor of the invention can effectively detect ultraviolet light, has simple structure and low manufacturing cost.
Description
technical field [0001] The present invention relates to a semiconductor integrated circuit manufacturing device, in particular to an ultraviolet image sensor; in addition, the present invention also relates to a manufacturing method of the above ultraviolet image sensor. Background technique [0002] Ultraviolet image sensing is a technology widely used in medicine, biology, defense and public safety. Currently commonly used image sensors are as follows: [0003] 1. Add a phosphorescent substance sensitive to ultraviolet light above the image sensor, and then use the visible light emitted by the phosphorescent substance to detect ultraviolet light. However, since the light of the phosphorescent substance radiates to the surroundings, only the downward part is effective, which will reduce the detection efficiency. At the same time, the response of phosphorescent substances to light is delayed, so the dynamic performance is not ideal. [0004] 2. Ultraviolet image sensors m...
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IPC IPC(8): H01L21/822H01L27/146
Inventor 陈华伦陈瑜熊涛罗啸陈雄斌
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP