Composition for cleaning and rust prevention and process for producing semiconductor element or display element

A technology for display elements and compositions, which is applied in the manufacture of semiconductor/solid-state devices, the preparation of anti-corrosion compositions, and the preparation of detergent mixture compositions, etc., can solve problems such as no method for removing anti-corrosion agents disclosed.
CN101755324AActive Publication Date: 2010-06-23MITSUBISHI GAS CHEM CO INC
9 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
MITSUBISHI GAS CHEM CO INC
Publication Date
2010-06-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A composition for cleaning and rust prevention which is for use in the step of producing, e.g., a semiconductor element having a metallic wiring containing copper. The composition comprises: an anticorrosive component comprising any of pyrazole, pyrazole derivatives such as 3,5-dimethylpyrazole, 1,2,4-triazole, triazole derivatives, aminocarboxylic acid compounds such as iminodiacetic acid and ethylenediaminedipropionic acid hydrochloride, and disulfides such as diisopropyl disulfide and diethyl disulfide; and a detergent component comprising any of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane, and dimethylacetamide. Also provided is a process for producing a semiconductor element or the like using the composition for cleaning and rust prevention.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a composition for cleaning and anticorrosion and a method for manufacturing a semiconductor element or a display element using the composition for cleaning and anticorrosion. It can prevent etching residues on the surface of objects, prevent the deterioration of metal wiring containing copper or copper alloy, and can easily remove the anticorrosion agent attached to the metal wiring before film formation in the film forming process. Background technique

[0002] As a method of manufacturing highly integrated semiconductor elements such as LSIs, photolithography is generally used. When manufacturing a semiconductor element by this photolithography method, a series of steps as described below are generally applied. First, on a substrate such as a silicon wafer, a conductive thin film such as a metal film constituting a conductive wiring material, and an interlayer insulating film such as a silicon oxide film for insulati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More