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Composition for cleaning and rust prevention and process for producing semiconductor element or display element

A technology for display elements and compositions, which is applied in the manufacture of semiconductor/solid-state devices, the preparation of anti-corrosion compositions, and the preparation of detergent mixture compositions, etc., can solve problems such as no method for removing anti-corrosion agents disclosed.

Active Publication Date: 2010-06-23
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] JP 2000-282096 and JP 2005-333104 disclose cleaning solutions containing imidazoles, thiazoles and triazoles as preservatives, but do not disclose the removal method of preservatives

Method used

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  • Composition for cleaning and rust prevention and process for producing semiconductor element or display element
  • Composition for cleaning and rust prevention and process for producing semiconductor element or display element
  • Composition for cleaning and rust prevention and process for producing semiconductor element or display element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～20 and comparative example 1～20

[0067] The antiseptic components shown in the following Tables 1 and 2 were mixed with the following detergent components to prepare the cleaning and antiseptic compositions of Examples 1-20 and Comparative Examples 1-20. Using these cleaning and antiseptic compositions, the following evaluations were performed.

[0068] (cleaning agent ingredients)

[0069] Liquid A: 0.4% by mass of ammonium fluoride, 0.03% by mass of glyoxylic acid, the balance of water

[0070] Liquid B: 12% by mass of acetic acid, 15.2% by mass of ammonium acetate, 57.5% by mass of dimethylacetamide, 1% by mass of ammonium fluoride, and the balance of water

[0071] Liquid C: 3.4% by mass of oxalic acid, 0.05% by mass of ascorbic acid, the balance of water

[0072] Liquid D: 0.1% by mass of 1,2-diaminopropane, 0.5% by mass of tetramethylammonium fluoride, 1.5% by mass of acetic acid, the balance of water

[0073] (Evaluation 1: Cleanability)

[0074] Will figure 1The shown semiconductor elements were ...

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PUM

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Abstract

A composition for cleaning and rust prevention which is for use in the step of producing, e.g., a semiconductor element having a metallic wiring containing copper. The composition comprises: an anticorrosive component comprising any of pyrazole, pyrazole derivatives such as 3,5-dimethylpyrazole, 1,2,4-triazole, triazole derivatives, aminocarboxylic acid compounds such as iminodiacetic acid and ethylenediaminedipropionic acid hydrochloride, and disulfides such as diisopropyl disulfide and diethyl disulfide; and a detergent component comprising any of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane, and dimethylacetamide. Also provided is a process for producing a semiconductor element or the like using the composition for cleaning and rust prevention.

Description

technical field [0001] The present invention relates to a composition for cleaning and anticorrosion and a method for manufacturing a semiconductor element or a display element using the composition for cleaning and anticorrosion. It can prevent etching residues on the surface of objects, prevent the deterioration of metal wiring containing copper or copper alloy, and can easily remove the anticorrosion agent attached to the metal wiring before film formation in the film forming process. Background technique [0002] As a method of manufacturing highly integrated semiconductor elements such as LSIs, photolithography is generally used. When manufacturing a semiconductor element by this photolithography method, a series of steps as described below are generally applied. First, on a substrate such as a silicon wafer, a conductive thin film such as a metal film constituting a conductive wiring material, and an interlayer insulating film such as a silicon oxide film for insulati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C11D7/32C11D7/34C23G1/04H01L21/3205H01L21/768
CPCC11D7/3281C11D3/33C11D7/3263C23G1/103H01L21/02068C11D7/3245C23G1/06C11D3/0073C11D11/0047C11D7/10C11D3/28C11D7/265C11D7/3209H01L21/02063C11D2111/22
Inventor 岛田宪司松永裕嗣安部幸次郎山田健二
Owner MITSUBISHI GAS CHEM CO INC
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