Vanadium dioxide precursor liquid and method for preparing thin-film material by using the same
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
- Publication Date
- 2010-06-30
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of material chemistry, and in particular relates to a vanadium dioxide precursor solution and a method for preparing thin film materials. Background technique
[0002] my country is an energy-short country, but the current energy consumption per unit building area in my country is 2 to 3 times that of developed countries, and the total energy consumption of buildings in my country is showing an upward trend year by year. The proportion of my country's building energy consumption in total energy consumption has risen from 10% in the late 1970s to about 30% in 2007. At present, my country is in the stage of rapid industrialization and urbanization. The area of houses built every year is as high as 1.6 billion to 2 billion square meters, which exceeds the sum of the annual built areas of all developed countries, and more than 95% of them are high energy consumption buildings. These buildings will continue to...