Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser scanning scattering detection and classification system for silicon slice surface defects

A technology of silicon wafer surface, laser scanning, applied in scattering characteristic measurement, optical test defect/defect, optics, etc., can solve the problem of production line yield decline, etc., to achieve the effect of improving working voltage, good reliability and improving sensitivity

Inactive Publication Date: 2010-06-30
上海傲世控制科技股份有限公司
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such problems cannot be detected and resolved in time, the yield of the production line will drop significantly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser scanning scattering detection and classification system for silicon slice surface defects
  • Laser scanning scattering detection and classification system for silicon slice surface defects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail. like figure 1 The schematic diagram of the principle of the laser scanning scattering detection and classification system for the surface defect of the silicon wafer is shown, which is also the structural diagram of the preferred embodiment of the present invention. As can be seen from the figure, the structural composition of the system includes: the light beam sent by the laser light source assembly 1 advances In the direction of the direction, there is a beam expander system composed of a Faraday isolator 2, a double-concave lens 3 and a first plano-convex lens 4, a double-cement focusing lens 5, and the light beam is turned by a plane mirror 6 and obliquely focused and incident on the surface of the measured silicon wafer 7 , the silicon wafer 7 is located on the workbench 15; the scat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Caliberaaaaaaaaaa
Login to View More

Abstract

The invention discloses a laser scanning scattering detection and classification system for silicon slice surface defects. A silicon slice to be detected is placed on a high-stability silicon slice workbench, a bunch of focused laser is adopted to irradiate the surface plane of the silicon slice to be detected from an inclined direction, and scattered lights generated by defects are collected through round narrow channel collection and circular wide channel collection by two pairs of plano-convex lenses along the direction close to the normal line of the silicon slice surface and the direction proximately parallel to the silicon slice surface, thus being detected by two photoelectric detectors. Bi-channel photoelectric signal strength and relative ratio thereof are respectively detected by the two photoelectric detectors, and classification detection on defects in tens of nanometers on the silicon slice surface can be carried out by comparing the bi-channel photoelectric signal strength and the relative ratio thereof with a preset threshold value.

Description

technical field [0001] The invention relates to a laser scanning scattering detection and classification system, in particular to a laser scanning scattering detection and classification of silicon chip surface defects with simple structure, high sensitivity, fast detection speed, and the ability to classify and locate silicon chip surface defects system. Background technique [0002] Every step of chip production can introduce defects and contamination either mechanically or artificially. In recent years, due to the continuous increase of silicon chip size and the sharp reduction of integrated circuit graphic feature size, the chip structure has become more complex, and the impact of defect density on yield has become more and more prominent. If such problems cannot be discovered and resolved in time, the yield of the production line will drop significantly. [0003] Laser scanning scattering detection technology for silicon wafer surface defects has been developed rapidl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/88G01N21/49G02B17/08G02B5/08
Inventor 王毅强陈建芳程兆谷许永锋敖计祥黄惠杰
Owner 上海傲世控制科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com