Method for pretreating technical cavity of plasma device

A process chamber and pretreatment technology, which is applied in the direction of metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of poor bonding force between the protective layer and the inner wall of the process chamber, so as to reduce the generation of particle pollutants, High adhesion performance and enhanced corrosion resistance
CN101764044AActive Publication Date: 2010-06-30BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Publication Date
2010-06-30

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Abstract

The invention relates to a method for pretreating a technical cavity of a plasma device, which is applied to the aluminous inner wall or the surface of an interior part of the technical cavity to form a protective layer. The invention comprises the steps of: carrying out fluorization on the inner wall and the surface of an interior part with plasma containing fluorine, and forming an aluminum fluorine compound barrier layer at the inner wall and the surface of an interior part. The aluminum fluorine compound formed by the invention has strong binding force with the inner wall of the technical cavity and the interior part, the size of the binding force of all parts is basically same, the corrosion resistance of the plasma is increased, particulate pollutant can be avoided or reduced, and compared with a spraying method, the invention has low cost and reduced manufacture difficulty.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a pretreatment method for a process chamber of a plasma device. Background technique

[0002] Dry etching machines, ion implanters, and chemical vapor deposition (CVD) equipment are important equipment used in the integrated circuit manufacturing process. In the above-mentioned equipment, the process gas mainly composed of halogen elements is introduced into the process chamber, and the ionization of the process gas is excited by the excitation source to form high-density plasma, which is used to treat the semiconductor substrate or structure in the process chamber. For processing; for example, in the dry etching process, plasma is used to etch patterns on semiconductor substrates or structures; in chemical vapor deposition processes, plasma-assisted deposition is used to form dielectric or metal film layers; in ion implantation In the process, the substrate is doped by i...

Claims

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