Silicon-on-insulator lateral insulated gate bipolar transistor and process manufacturing method

A technology of silicon-on-insulator and bipolar transistors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of silicon-eating, severe, and inability to accurately control the depth and concentration distribution of N-type doping buffers, etc. problem, to achieve the effect of increasing the lateral breakdown voltage
CN101764150AActive Publication Date: 2010-06-30SUZHOU POWERON IC DESIGN
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU POWERON IC DESIGN
Publication Date
2010-06-30

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Abstract

The invention discloses a process manufacturing method of a silicon-on-insulator lateral insulated gate bipolar transistor, comprising a P-type doped semiconductor substrate, a buried oxide layer is arranged on the P-type doped semiconductor substrate, an oxide layer is provided with an N-type drift region, a field oxide layer of the silicon-on-insulator lateral insulated gate bipolar transistor belongs to a second-order field oxide layer, and a field board which is formed by a gate extending to the above of the field oxide layer is a second-order field board. The second-order field oxide layer is formed by the steps of depositing the oxide layer, etching and thermal growth. An N-type doped buffer region is formed by implanting high-energy ions for self-alignment of the second-order field oxide layer.
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Description

technical field

[0001] The invention belongs to the technical field of integrated circuits, and relates to a manufacturing method of a lateral high-voltage power device, more specifically, to a lateral insulated gate bipolar transistor with silicon-on-insulator and a manufacturing method thereof. Background technique

[0002] An insulated gate bipolar transistor (IGBT) is a device that has the advantages of an insulated gate structure of a metal oxide semiconductor (MOS) transistor and the advantages of high current density of a bipolar transistor. It is a device that can be used to effectively reduce the traditional Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a power semiconductor device with conduction loss.

[0003] In order to be able to integrate with other semiconductor devices, Lateral Insulated Gate Bipolar Transistor (LIGBT) has received extensive attention and rapid development. Similarly, this device has high input impedance, high withstand...

Claims

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