Silicon-on-insulator lateral insulated gate bipolar transistor and process manufacturing method

Abstract

The invention discloses a process manufacturing method of a silicon-on-insulator lateral insulated gate bipolar transistor, comprising a P-type doped semiconductor substrate, a buried oxide layer is arranged on the P-type doped semiconductor substrate, an oxide layer is provided with an N-type drift region, a field oxide layer of the silicon-on-insulator lateral insulated gate bipolar transistor belongs to a second-order field oxide layer, and a field board which is formed by a gate extending to the above of the field oxide layer is a second-order field board. The second-order field oxide layer is formed by the steps of depositing the oxide layer, etching and thermal growth. An N-type doped buffer region is formed by implanting high-energy ions for self-alignment of the second-order field oxide layer.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and relates to a manufacturing method of a lateral high-voltage power device, more specifically, to a lateral insulated gate bipolar transistor with silicon-on-insulator and a manufacturing method thereof. Background technique [0002] An insulated gate bipolar transistor (IGBT) is a device that has the advantages of an insulated gate structure of a metal oxide semiconductor (MOS) transistor and the advantages of high current density of a bipolar transistor. It is a device that can be used to effectively reduce the traditional Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a power semiconductor device with conduction loss. [0003] In order to be able to integrate with other semiconductor devices, Lateral Insulated Gate Bipolar Transistor (LIGBT) has received extensive attention and rapid development. Similarly, this device has high input impedance, high withstand...

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Problems solved by technology

[0004] In order to further increase the breakdown voltage of SOI-LIGBT, the improved structure adopts the method of extending the length of the polysilicon gate so that it covers the second-order field oxide layer to form a second-order field plate structure. This method has a certain effect. In related technologies, the formation of the second-stage field oxide layer is directly grown through thermal oxidation, and then formed through an etching process. However, the phenomenon of "silicon eating" in this process is very serious, which affects the surface morphology and surface area of ​​the drift region. concentration distribution

At the same time, in order to prevent SOI-LIGBT from punching through the anode, the improved structure will be provided with an N-type doped buffer zone 8 on the left side of the N-type doped drift region 6 (such as figure 1 shown), in the related art, the formation of the N-type doped buffer zone is completed by ion implantation before forming the P-type doped anode contact region 9, and then annealed, but this process method cannot accurately control the N-type Depth and concentration distribution of doping buffer

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