IGBT drive and protection circuit

A technology for protecting circuits and circuits, applied in the field of power electronics, can solve problems such as insufficient power-down protection, IGBT false turn-on, lack of gate protection collector overvoltage protection, etc.
CN101764595AActive Publication Date: 2010-06-30宁波德业变频技术有限公司

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
宁波德业变频技术有限公司
Publication Date
2010-06-30

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention belongs to the technical field of power electronics, in particular to an IGBT drive and protection circuit which can effectively realize power-down protection and can not be switched on by mistake. The IGBT drive and protection circuit comprises a common-emitter amplifying circuit, and a push-pull drive circuit and IGBT, wherein the common-emitter amplifying circuit is provided with a PWM signal input terminal for amplifying PWM signals, and the push-pull drive circuit is provided with a VDD power supply input terminal for receiving power from a VDD power supply. An NPN triode is connected between the common-emitter amplifying circuit and the PWM signal input terminal. The PWM signal input terminal is led out from the emitter; a base electrode of the terminal is provided with a VCC power supply input terminal through a resistor for receiving power from a VCC power supply; and a collecting electrode of the terminal is connected with the VDD power supply input terminal through a resistor. The IGBT drive and protection circuit has functions of power-down protection, gate protection and overvoltage protection for collecting electrodes, and is stable and reliable.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of power electronics and relates to a driving and protection circuit of an insulated gate bipolar transistor IGBT. Background technique

[0002] Insulated gate bipolar transistor IGBT combines the advantages of power transistor and power field effect transistor MOSFET. It has the characteristics of easy driving, large peak current capacity, self-shutoff, and high switching frequency (10-50kHz). It is widely used in small volume, Among high-efficiency variable frequency power supplies, motor speed control, UPS and inverter welding machines, the driving and protection of IGBTs are the key technologies in their applications.

[0003] The general IGBT driving circuit in the prior art such as figure 1 , It is not perfect in power-down protection; when the PWM signal terminal loses power, the IGBT will be turned on by mistake; and it lacks gate protection and collector overvoltage protection. Contents of the in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More