IGBT drive and protection circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 宁波德业变频技术有限公司
- Publication Date
- 2010-06-30
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention belongs to the technical field of power electronics and relates to a driving and protection circuit of an insulated gate bipolar transistor IGBT. Background technique
[0002] Insulated gate bipolar transistor IGBT combines the advantages of power transistor and power field effect transistor MOSFET. It has the characteristics of easy driving, large peak current capacity, self-shutoff, and high switching frequency (10-50kHz). It is widely used in small volume, Among high-efficiency variable frequency power supplies, motor speed control, UPS and inverter welding machines, the driving and protection of IGBTs are the key technologies in their applications.
[0003] The general IGBT driving circuit in the prior art such as figure 1 , It is not perfect in power-down protection; when the PWM signal terminal loses power, the IGBT will be turned on by mistake; and it lacks gate protection and collector overvoltage protection. Contents of the in...