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Yb3+ or Nd3+ doped yttrium-lutetium-aluminum garnet laser crystal and growing method thereof

A growth method, laser crystal technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as high efficiency, high power and ultrashort pulse, narrow emission wavelength range, etc.

Inactive Publication Date: 2010-07-07
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Yb:YAG, Nd:YAG and Yb:LuAG, Nd:LuAG crystals are excellent high-power laser gain media, but the relatively narrow emission wavelength range of the crystals makes the crystals unable to meet the needs of high-efficiency, high-power and ultra-short pulse lasers at the same time output

Method used

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  • Yb3+ or Nd3+ doped yttrium-lutetium-aluminum garnet laser crystal and growing method thereof
  • Yb3+ or Nd3+ doped yttrium-lutetium-aluminum garnet laser crystal and growing method thereof
  • Yb3+ or Nd3+ doped yttrium-lutetium-aluminum garnet laser crystal and growing method thereof

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Effect test

Embodiment 1

[0027] The Yb 3+ The growth method of the doped yttrium lutetium aluminum garnet laser crystal comprises the following steps:

[0028] Raw material formula

[0029] The Yb 3+ :Lu x Y 3-x al 5 o 12 The initial raw material of the crystal is Yb 2 o 3 , Lu 2 o 3 , Y 2 o 3 , Al 2 o 3 , the raw materials are dosed in a molar ratio equal to y:x:(3-x):5, wherein y=0.05, x=0.5. After the raw materials are mixed evenly, they are pressed into blocks on a hydraulic press, placed in an iridium crucible, and the crystals are grown by the pulling method. The seed crystals are strictly oriented Lu 3 al 5 o 12 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.

[0030] The above-grown Yb 3+ :Lu x Y 3-x al 5 o 12 The crystal was cut into pieces, and after optical polishing, its spectral performance was tested at room temperature, and the absorption spectrum was tested on a Jasco V-570UV / VIS / NIR spectrophotometer. Use riax550 fluorescence spect...

Embodiment 2

[0034] Will Yb 2 o 3 , Lu 2 o 3 , Y 2 o 3 and Al 2 o 3 High-purity raw materials are weighed according to y=0.1, x=1.0. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal. The seed crystal is strictly oriented Lu 3 al 5 o 12 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.

Embodiment 3

[0036] Will Yb 2 o 3 , Lu 2 o 3 , Y 2 o 3 and Al 2 o 3 High-purity raw materials are weighed according to y=0.3, x=1.5. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal. The seed crystal is strictly oriented Lu 3 al 5 o 12 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.

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Abstract

The invention relates to a Yb3+ or Nd3+ doped yttrium-lutetium-aluminum garnet laser crystal and a growing method thereof. The obtained Yb3+ or Nd3+ doped LuxY3-xAl5O12 laser crystal has obviously spread crystal fluorescence spectrum and is expected to obtain high power and ultrafast laser output by adopting a mode-locking technology.

Description

technical field [0001] The present invention relates to yttrium lutetium aluminum garnet laser crystal (hereinafter referred to as Lu x Y 3-x al 5 o 12 ), especially a Yb 3+ or Nd 3+ Doped yttrium lutetium aluminum garnet laser crystal and growth method thereof, Yb 3+ doped yttrium lutetium aluminum garnet (Lu x Y 3-x al 5 o 12 ) is a laser crystal with an emission wavelength of 1030nm, which is suitable for InGaAs diode pumping; Nd 3+ Doped Lu x Y 3-x al 5 o 12 It is a laser crystal whose emission wavelength is in the 1064nm band, which is suitable for Ti:Sapphire laser pumping. Background technique [0002] Lasers in the near-infrared band have become one of the current academic hotspots, Yb 3+ It has the advantages of no excited state absorption, no upconversion, high doping concentration, high quantum efficiency and long fluorescence lifetime. Currently, Yb 3+ Usually, an InGaAs diode with an emission wavelength around 980nm is used as the pump source; Nd...

Claims

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Application Information

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IPC IPC(8): C30B29/28H01S3/16
Inventor 徐晓东成诗恕吴锋李东振程艳周大华
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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