Silicon substrate heterojunction solar cell with band gap being controllable

A technology of solar cells and heterojunctions, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of crystalline silicon textured surface and process conditions are very sensitive, light degradation, etc., achieve weak temperature effect, reduce operating temperature, and improve Yield effect

Inactive Publication Date: 2010-07-07
GCL SYST INTEGRATION TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the problems faced by solar cells with this structure are the growth technology of the buffer layer, the process optimization of the conductive film, the metal-silicon alloying under low temperature conditions, and the electrode optimization. Very sensitive, so its production is a great challenge for industrialization
In addition, the absorber layer of the battery adopts amorphous silicon thin film, which will lead to photodegradation effect

Method used

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  • Silicon substrate heterojunction solar cell with band gap being controllable
  • Silicon substrate heterojunction solar cell with band gap being controllable
  • Silicon substrate heterojunction solar cell with band gap being controllable

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Embodiment Construction

[0015] Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

[0016] Embodiments of the present invention relate to a silicon-based heterojunction solar cell with adjustable bandgap, such as figure 1 As shown, it includes an n-type amorphous silicon carbon thin film layer 2, an n-type amorphous silicon thin film layer 3, an n-type microcrystalline silicon thin film layer 4, and a crystalline silicon material layer 5. The n-type amorphous silicon carbon thin film layer 2 , n-type amorphou...

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Abstract

The invention relates to a silicon substrate heterojunction solar cell with band gap being controllable, which combines characteristics of crystalline silicon and thin film material to form an amorphous silicon-carbon/amorphous silicon/microcrystalline silicon/crystalline silicon solar cell structure, being favorable for mitigating photoinduced attenuation effect of amorphous silicon film and improving stability of solar cell; dual heterojunction is formed semi-conductive material interfaces of different types or structure, two-dimensional electron gas effect is fully utilized, and carrier yield is efficiently enhanced; the formed high and low heterojunction electric field is favorable for migration of imbalance minority carriers and reduction of compound effect; a window effect is formed by utilizing semi-conductive materials of different band gaps, thus realizing selective absorption of the materials to light of different frequency bands, improving overall efficient utilization of incoming lights, enhancing photoelectric conversion efficiency of solar cell and promoting development of photovoltaic generation industry.

Description

technical field [0001] The invention relates to the technical field of solar cell photovoltaic power generation, in particular to a silicon-based heterojunction solar cell with an adjustable band gap. Background technique [0002] As a sustainable and clean energy, solar energy has great potential for development and application. Nowadays, the solar cell industry that develops rapidly in the field of photovoltaic power generation mainly includes crystalline silicon solar cells and thin film solar cells. The development of crystalline silicon solar cells has a relatively mature technical process, but due to factors such as raw material prices, complex production processes, high energy consumption, and pollution, the production cost of this type of cell is relatively high, and from the perspective of improving photoelectric conversion efficiency , the technology still needs to be further improved. Thin-film solar cells have a wide range of raw materials, low production costs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/06H01L31/042H01L31/036H01L31/072
CPCH01L31/0747Y02E10/50Y02E10/547
Inventor 倪开禄彭德香沈文忠司新文张剑孟凡英彭铮何宇亮高华李正平李长岭刘洪
Owner GCL SYST INTEGRATION TECH
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