Method for manufacturing copper target components
A manufacturing method and component technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of redundant heat treatment steps, high cost, complicated process flow, etc., so as to reduce heat treatment steps and improve production. Efficiency, effect of simplified process steps
Active Publication Date: 2012-09-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology
[0011] The purpose of the present invention is to provide a method for manufacturing a copper target assembly, which solves the problems of redundant heat treatment steps, high cost, and complicated process flow in the existing method
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[0027] figure 2 It is a schematic flow diagram of the manufacturing method of the copper target assembly of the present invention; as figure 2 As shown, the manufacturing method of the copper target assembly of the present invention, the specific steps are as follows:
[0028] S1. Provide a copper column, cut and roll the copper column to form a copper sputtering plate;
[0029] According to the application environment of the copper target assembly and the actual needs of the sputtering equipment, the shape and size of the copper back plate need to be selected, and the specific thickness and cross-sectional area of the copper sputtering plate can be determined by adjusting the specific parameters of the rolling process. Adjustment.
[0030] S2. Provide a back plate, and weld the copper sputtering plate to the back plate to form a target assembly;
[0031] As an optional solution, the welding process can be a hot pressing method, which can be carried out in a vacuum. Spe...
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Abstract
A method for manufacturing copper target components is characterized by comprising the following steps: providing copper pillars and cutting and calendaring the copper pillars to form copper sputtering plates; providing back plates and welding the copper sputtering plates on the back plates to form the target components; carrying out heat treatment on the target components under vacuum and normalpressure and then cooling the target components; and mechanically machining the target components. In the method, the process conditions for heat treatment on the target components are optimized so that the microstructures of the copper sputtering plates are simultaneously controlled in the process of heat diffusion treatment. The process step is simplified and the production efficiency is improved while the firmness and the quality of the copper target components are ensured.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a copper target component. Background technique [0002] In the semiconductor industry, the target assembly is composed of a sputtering plate that meets the sputtering performance and a back plate that is combined with the sputtering plate and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. At present, metal tantalum (Ta), copper (Cu), aluminum (AL), etc. are mainly used to coat films by physical vapor deposition (PVD) and form barrier layers as sputtering plates, and magnetron sputtering is used in the sputtering process; Use copper or aluminum material with sufficient strength, high thermal conductivity and high electrical conductivity as the backplane material. [0003] The high-purity copper sputtering plate and the back...
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IPC IPC(8): C23C14/34
Inventor 姚力军潘杰王学泽袁海军刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD