Method for fast representing phase-change materials and dielectric layers
A technology of phase change materials and dielectric layers, applied in the field of characterizing phase change materials and dielectric layers, quickly characterizing the electrical properties of phase change materials and dielectric layers, can solve difficult and non-volatile problems, achieve good contact and speed up development The effect of speed and good adhesion
Active Publication Date: 2010-07-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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However, according to Moore's Law, when the existing memory cell design is below 45nm, it is difficult to maintain its non-volatile characteristics.
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[0035] The specific implementation steps of the present invention will be further described below in conjunction with the accompanying drawings, which are not drawn to scale for the convenience of illustration.
[0036] Please see Figure 1-Figure 8 , the invention discloses a method for quickly characterizing phase change materials and dielectric layers, the method comprising the following steps:
[0037] Step 1, cleaning silicon wafer (need to carry out the cleaning of silicon wafer before preparing test structure usually, but do not have this step and also do not influence the implementation of the present invention.):
[0038] (1). Use 1# liquid to clean the silicon wafer, wherein the formula of 1# liquid is: ammonia water: hydrogen peroxide: deionized water = 1:2:5, and the cleaning method is: first put the silicon wafer into the 1# liquid and boil for 5 Minutes, rinse with deionized water for 3 minutes after cooling, and then blow dry with nitrogen. Its main function i...
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Abstract
The invention relates to a method for fast representing phase-change materials and dielectric layers, which comprises the following steps: cleaning a silicon chip, preparing a bottom layer dielectric layer on the silicon chip; preparing a bottom layer electrode on the bottom layer dielectric layer; preparing an dielectric layer on the bottom layer electrode, preparing a series of through holes through the photoetching and etching process on the dielectric layer so that the bottom layer electrode under the dielectric layer can be exposed out from the through holes; preparing phase-change materials in the through holes, and making the phase-change materials be in contact with the bottom layer electrode; preparing a top layer contact electrode on the phase-change materials; preparing a top layer heat insulation protective layer on the surface of the obtained structure; and adopting a three-dimensional controller for fast positioning a nanometer mechanical probe so that the nanometer mechanical probe can be in contact with the top layer contact electrode, so the test representation of the material electric performance is completed. The test method of the invention has simple process steps, uses the three-dimensional controller for accurately operating and controlling the nanometer mechanical probe to be fast positioned on the upper part of the unit structure, sot the fast test of the electric performance of the phase-change materials and the dielectric layers can be completed.
Description
technical field [0001] The invention relates to a method for characterizing phase-change materials and dielectric layers, in particular to a method for quickly characterizing the electrical properties of phase-change materials and dielectric layers, and belongs to the technical field of microelectronics and solid electronics. Background technique [0002] Chalcogenide random access memory is developed based on the idea that chalcogenide thin films can be applied to phase-change storage media proposed by S.R. Ovshinsky in the late 1960s and early 1970s. In 2001, Intel Corporation reported 4MB C-RAM for the first time, and Samsung Corporation reported 512MB C-RAM by the end of 2006. At present, the mainstream non-volatile memory is mainly flash memory. However, according to Moore's law, when the existing memory cell design is below 45nm, it is difficult to maintain its non-volatile characteristics. Since phase change memory does not need to erase the original data when writi...
Claims
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IPC IPC(8): G01R31/00H01L45/00
Inventor 宋志棠吕士龙
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI