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Preparation method of CdSe/CdS core-shell structure quantum dots

A quantum dot and shell structure technology, applied in the field of quantum dots, can solve problems such as high toxicity

Active Publication Date: 2010-07-21
CHANGZHOU INST OF ENERGY STORAGE MATERIALS &DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the above patent, n-heptane, which is far less toxic than toluene, was used as a solvent to prepare cadmium sulfide quantum dots at high temperature, but trioctylphosphine oxide is an organic phosphine, and when it is selected as a coating agent, it is very toxic

Method used

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  • Preparation method of CdSe/CdS core-shell structure quantum dots
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preparation example Construction

[0026] The invention provides a preparation method of CdSe / CdS core-shell structure quantum dots, comprising:

[0027] Take the selenourea aqueous solution and the n-heptane solution of cadmium alkyl carboxylate and mix to obtain the first mixed solution, heat the first mixed solution to 40°C-70°C, stir the first mixed solution to react, from the reaction CdSe quantum dots are separated from the organic phase solution;

[0028] Get the CdSe quantum dots and join in the n-heptane solution of cadmium alkyl carboxylate;

[0029] Mix the thiourea aqueous solution with the n-heptane solution of cadmium alkyl carboxylate containing CdSe quantum dots to obtain a second mixed solution, heat the second mixed solution to 40°C to 70°C, and stir the second mixed solution Liquid reaction to obtain quantum dots with CdSe / CdS core-shell structure;

[0030] The n-heptane solution of the cadmium alkyl carboxylate is composed of the cadmium alkyl carboxylate, an organic coating agent and n-he...

Embodiment 1

[0043] Preparation of n-heptane solution of cadmium tetradecyl carboxylate;

[0044] Add 0.1134g of cadmium tetradecyl carboxylate, 1.0ml of oleic acid and 10ml of n-heptane into a 50ml round bottom flask, stir at a constant speed, heat to 80℃~100℃ until a colorless and transparent solution is formed, then cool At room temperature, a n-heptane solution of cadmium tetradecyl carboxylate was obtained.

Embodiment 2

[0047] Preparation of CdSe quantum dots:

[0048] Get 0.0125g selenourea solution and be dissolved in 10ml nitrogen saturated water to obtain selenourea aqueous solution, the n-heptane solution of described selenourea aqueous solution and the cadmium tetradecyl carboxylate prepared in 10ml embodiment 1 in the round bottom flask of 50ml nitrogen gas Mix under protection, seal the round-bottom flask, put it in a 40°C oil bath, stir the mixed liquid in the round-bottom flask at a constant speed, the reaction time is 20min, take out the round-bottom flask and cool to room temperature. Taking out the upper organic phase of the reaction solution, using acetone as a precipitating agent to purify the CdSe quantum dots in the organic phase, and centrifuging to obtain the CdSe quantum dots. Its fluorescence emission peak is at 467nm, and its emission peak shape is symmetrical, but there is tailing, which is caused by defect emission.

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Abstract

The invention provides a preparation method of CdSe / CdS core-shell structure quantum dots, which is characterized by comprising the following steps of: mixing a selenourea water solution and a normal heptane solution of alkyl carboxylic cadmium to obtain a first mixed solution, stirring the first mixed solution at 40-70 DEG C for reacting, and separating out CdSe quantum dots from an organic phase solution after the reaction; adding the CdSe quantum dots into the normal heptane solution of the alkyl carboxylic cadmium; and mixing the selenourea water solution and the CdSe quantum-containing normal heptane solution of the alkyl carboxylic cadmium to obtain a second mixed solution, and stirring the second mixed solution at 40-70 DEG C for reacting to obtain the CdSe / CdS core-shell structurequantum dots, wherein the normal heptane solution of the alkyl carboxylic cadmium consists of alkyl carboxylic cadmium, an organic cladding agent and normal heptane.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a preparation method of CdSe / CdS core-shell structure quantum dots. Background technique [0002] Quantum dots generally refer to nanoparticles with radii smaller than or close to their Bohr excitonic radii. The research on quantum dot materials is a research involving interdisciplinary fields. In addition to semiconductor quantum dots, there are also quantum dots of metals and other substances. The quantum dots mentioned in this article refer to semiconductor quantum dots unless otherwise specified. Semiconductor quantum dots are aggregates of nanoscale atoms and molecules, and the general particle size ranges from 2-40nm. Due to the characteristics of adjustable emission wavelength and high quantum yield, quantum dots have broad application prospects in the fields of optoelectronic devices and life sciences. Quantum dots are divided into single quantum dots and quantum d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06
Inventor 马晓波姬相玲聂伟
Owner CHANGZHOU INST OF ENERGY STORAGE MATERIALS &DEVICES
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