Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition

A technology for heating coils and zone melting of silicon, which is applied in the directions of single crystal growth, single crystal growth, self-zone melting method, etc., can solve the problem of low crystallization rate, inability to achieve continuous purification of large-diameter raw materials, and inability to obtain high-resistance single crystals and other problems to achieve the effect of preventing the collapse of the molten zone

Active Publication Date: 2010-07-28
峨嵋半导体材料研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] If multi-turn or single-turn coils are simply used, there are two problems of low crystallization rate and continuous purification of large-diameter raw materials, and a simple combination of the two cannot produce large-diameter high-resistance single crystals. On

Method used

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  • Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition
  • Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition
  • Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition

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Embodiment 1

[0043] A heating coil device for preparing high-resistance melting silicon single crystals in a vacuum atmosphere, comprising a heating coil device for melting and purifying polysilicon in a vacuum zone and a heating coil device for vacuum crystallization of silicon single crystals, and the two devices are used in conjunction;

[0044] Such as figure 1 As shown, the polycrystalline silicon vacuum zone melting and purification heating coil device includes an upper short-circuit ring 1, a multi-turn heating coil 2, a lower short-circuit ring 3, and an upper short-circuit ring 1 from top to bottom. They are parallel to each other and perpendicular to the direction of crystal movement. Welded on the electrode cylinder 4, the diameter of the upper and lower short-circuit rings is slightly larger than the outer diameter of the multi-turn heating coil 2;

[0045] The distance from the upper short-circuit ring 1 to the multi-turn heating coil 2 is 7 mm, the distance from the lower sho...

Embodiment 2

[0053] A heating coil device for preparing high-resistance melting silicon single crystals in a vacuum atmosphere, including a heating coil device for melting and purifying polysilicon in a vacuum zone and a heating coil device for silicon single crystal crystallization, and the two devices are used in conjunction;

[0054] Such as figure 2 As shown, the polysilicon vacuum zone melting and purification heating coil device includes an upper short-circuit ring 1, a multi-turn heating coil 2, a lower short-circuit ring 3, and an upper short-circuit ring 1 from top to bottom, which are parallel to each other and perpendicular to the direction of crystal movement, and Welded on the electrode cylinder 4 respectively, and the diameter of the upper and lower short-circuit rings is slightly larger than the outer diameter of the multi-turn heating coil 2;

[0055] 1 The upper short-circuit ring 1 is 14mm away from the incense-type multi-turn heating coil, the distance between the lower...

Embodiment 3

[0064] A heating coil device for preparing high-resistance melting silicon single crystals in a vacuum atmosphere, including a heating coil device for melting and purifying polysilicon in a vacuum zone and a heating coil device for silicon single crystal crystallization, and the two devices are used in conjunction;

[0065] Such as image 3 As shown, the polysilicon vacuum zone melting and purification heating coil device includes an upper short-circuit ring 1, a multi-turn heating coil 2, a lower short-circuit ring 3, and an upper short-circuit ring 1 from top to bottom, which are parallel to each other and perpendicular to the direction of crystal movement, and It is fixedly connected to the electrode cylinder 4 by screws, and the diameter of the upper and lower short-circuit rings is slightly larger than the outer diameter of the multi-turn heating coil 2;

[0066] The upper short-circuit ring 1 is 10 mm away from the incense-type multi-turn heating coil 2 , and the distanc...

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Abstract

The invention discloses a heater coil device and an ancillary device for preparing high resistance zone-melting monocrystalline silicon with more than 40 mm of diameter in vacuum condition; wherein, a first type of multi-turn coil device is used for vacuum purification, and a second type of single-turn coil device is used for vacuum crystallization, and the two types of coil devices are coordinated with each other; the multi-turn coil device comprises an upper short circuit ring, a multi-turn heater coil and a lower short circuit ring, and the single-turn coil device comprises a single-turn flat heater coil; the invention designs special size specifications and contours for the two coils and additionally adopts effective auxiliary ancillary parts for solving the two technical problems of vacuum environment and large diameter; as a result, the coils and the ancillary device can be adopted to continuously purify larger-diameter raw material in vacuum condition and draw the purified raw material into large-diameter high resistance zone-melting monocrystalline silicon with quality reaching detector-level standards.

Description

technical field [0001] The invention relates to a heating coil device, in particular to a heating coil device for preparing a high-resistance molten silicon single crystal with a diameter greater than 40 mm under a vacuum atmosphere. Background technique [0002] Zone melting technology is a method of growing single crystals by melting and crystallizing polycrystalline ingots in different regions. In this method, a small piece of single crystal, the seed crystal, is placed at the head of the raw material, and a melting zone is established in the area where the seed crystal and the raw material ingot are connected, and the crystal is moved. The ingot or heater keeps the melting zone moving along the length of the ingot, causing the rest of the entire ingot to melt and crystallize in turn, and the single crystal grows continuously. This technique can be used to produce crystals of semiconductors, metals, alloys, inorganic and organic compounds with a purity of up to 99.999%. ...

Claims

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Application Information

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IPC IPC(8): C30B13/00C30B29/06
Inventor 蒋娜邓良平程宇朱铭谢江帆
Owner 峨嵋半导体材料研究所
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