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Aluminum alloy for semiconductor equipment and preparation method thereof

A technology of aluminum alloy and semiconductor, which is applied in the field of non-ferrous metal processing, aluminum alloy for semiconductor equipment and its preparation. It can solve the problems of poor product stability and quality control that cannot meet the needs of semiconductors, and achieve uniform oxide film, improved structure, and uniform structure. Effect

Active Publication Date: 2010-08-04
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quality control of domestic aluminum alloy enterprises is far from meeting the requirements of the semiconductor industry, resulting in poor product stability

Method used

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  • Aluminum alloy for semiconductor equipment and preparation method thereof
  • Aluminum alloy for semiconductor equipment and preparation method thereof
  • Aluminum alloy for semiconductor equipment and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] The alloy composition of the present invention is controlled as: Mg 1.20%, Si 0.75%, Cu 0.15%, Cr 0.20%, Mn 0.40%, Ti 0.02%, Fe 0.3%, the total of other impurity elements: 0.01%, Al: balance, Mg / Si 1.6, electromagnetic casting is 400×400×150mm ingot. After being qualified, it is transferred to forging and processed into aluminum alloy ingots for semiconductor equipment.

[0044] Such as figure 1 Shown, is process flow diagram of the present invention. The specific steps are as follows:

[0045] (1) Raw material inspection: inspect the raw materials, requiring no oil pollution, entrainment, etc.;

[0046] (2) Smelting: first, 2KgAl-Ti master alloy (Al is 96%, Ti is 4%), 15KgAl-Si master alloy (Al is 80%, Si is 20%) and 374.17Kg of pure metal Al (Al is 4%) 99.8%) into a smelting furnace for smelting under atmospheric conditions. After the alloy is melted, add 0.6Kg electrolytic Cu (99.8% Cu) at 680°C, and add 1.14Kg Cr agent at 750°C (Cr is 70wt%, the balance flux a...

Embodiment 2

[0055] The alloy composition of the present invention is controlled as: Mg 1.00%, Si 0.58%, Cu 0.10%, Cr 0.04%, Mn 0.10%, Ti 0.015%, Fe 0.3%, other impurity elements total: 0.01%, Al: balance, Mg / Si 1.73, electromagnetic casting is an ingot of 390×390×140mm. After being qualified, it is transferred to forging and processed into aluminum alloy ingots for semiconductor equipment.

[0056] (1) Raw material inspection: inspect the raw materials, requiring no oil pollution, entrainment, etc.;

[0057] (2) Smelting: first, 1.5KgAl-Ti master alloy (Al is 95%, Ti is 5%), 9.67KgAl-Si master alloy (Al is 70%, Si is 30%) and 482.455Kg pure metal Al is loaded The smelting furnace is smelted under atmospheric conditions. After the alloy is melted, 0.5Kg electrolytic Cu (99.9% of Cu) is added at 680°C, and 0.25Kg of Cr agent is added at 750°C (Cr is 80wt%, and the balance is flux and aluminum) and 0.625Kg Mn agent (Mn is 80wt%, the balance is flux and aluminum), and finally add 5Kg metal...

Embodiment 3

[0066] The alloy composition of the present invention is controlled as: Mg 1.15%, Si 0.65%, Mg / Si 1.7, Cu 0.12%, Cr 0.10%, Mn 0.25%, Ti 0.017%, Fe 0.01%, balance Al, electromagnetic casting is 390× 390×140mm ingot. After being qualified, it is transferred to forging and processed into aluminum alloy ingots for semiconductor equipment.

[0067] (1) Raw material inspection: inspect the raw materials, requiring no oil pollution, entrainment, etc.;

[0068] (2) Smelting: first, 3.4Kg Al-Ti master alloy (Al is 97%, Ti is 3%), 15.6Kg Al-Si master alloy (Al is 75%, Si is 25%) and 570.38Kg pure metal Al Put it into the smelting furnace for smelting under atmospheric conditions. After the alloy is melted, add 0.72Kg electrolytic Cu at 680°C, add 1Kg Cr agent (Cr is 60wt%, the balance is flux and aluminum) and 2KgMn agent (Mn is 60wt%, the balance is flux and aluminum), and finally add 6.9Kg metal Mg. The raw materials are stirred after softening and collapsing, and the surface is co...

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Abstract

The invention relates to an aluminum alloy for semiconductor equipment and a preparation method thereof, and belongs to non-ferrous metal processing technology. The aluminum alloy material for the semiconductor equipment consists of the following components in percentage by weight: 1.00 to 1.20 percent of Mg, 0.58 to 0.75 percent of Si, 1.6 to 1.73 percent of Mg / Si, 0.10 to 0.15 percent of Cu, 0.04 to 0.20 percent of Cr, 0.10 to 0.40 percent of Mn, 0.015 to 0.02 percent of Ti, less than or equal to 0.3 percent of Fe and the balance of Al. The texture of the aluminum alloy material for the semiconductor equipment is improved and becomes uniform by optimizing and controlling alloy elements, and all second-phase precipitates are distributed in crystals with the size of within 5 microns. After the alloy with the components is oxidized, an oxide film is uniform and has good quality without the defects of pinholes and the like.

Description

technical field [0001] The invention relates to an aluminum alloy for semiconductor equipment and a preparation method thereof, belonging to the nonferrous metal processing technology. Background technique [0002] The semiconductor equipment industry has extremely strict requirements on aluminum alloy materials. Taking the reaction chamber lining (aluminum alloy parts) for etching machines as an example, CF 4 , Cl 2 , HBr, O 2 , SF 6 , N 2 After waiting for the halogen corrosive gas, high-density plasma is excited under high-frequency voltage, and the aluminum alloy parts are bombarded and corroded during the etching process. In addition, during regular maintenance and cleaning, it is also subject to corrosion by strong corrosive media including hydrochloric acid, hydrobromic acid, hydrofluoric acid, nitric acid and ammonia water. There should be no defects such as pinholes on the surface of the component, otherwise it will be corroded in a large area immediately and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C21/08C22C1/03B22D1/00B22D11/049
Inventor 许小静闫晓东汤振雷
Owner GRIMAT ENG INST CO LTD
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