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Elastic wave device, communication module, and communication apparatus

A technology of elastic wave and components, applied in the field of IDT electrodes, can solve the problems of large reflection coefficient of IDT electrodes, achieve high reliability and improve temperature characteristics

Inactive Publication Date: 2013-06-19
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the structure disclosed in Patent Document 3, the reflection coefficient of the IDT electrode is sufficiently large, and characteristic deterioration due to fluctuations occurring in resonance characteristics etc. hardly occurs

Method used

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  • Elastic wave device, communication module, and communication apparatus
  • Elastic wave device, communication module, and communication apparatus
  • Elastic wave device, communication module, and communication apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0061] [1. Structure of elastic wave element]

[0062] figure 1 The structure of the elastic wave device in Embodiment 1 is shown. exist figure 1 In the elastic wave element 1, comb-shaped IDT electrodes 13 are formed on a piezoelectric substrate 14, and SiO is formed to cover the IDT electrodes 13. 2 film12. In this embodiment, also SiO 2 The displacement adjustment film 11 is formed on the upper portion of the film 12 . The displacement adjustment film 11 is made of SiO 2 Membrane 12 is a monolayer film of a material slower than the speed of sound or SiO 2 The material of the film 12 is formed of a laminated film whose main component is a slow material. For example, the displacement adjustment film 11 is preferably made of gold (Au), silver (Ag), platinum (Pt), tantalum (Ta), copper (Cu), tungsten (W), titanium (Ti), nickel (Ni) A single-layer film of any of them or a laminated film mainly composed of any of them. In particular, since Ta and W have close proximity...

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Abstract

An acoustic wave device of the present application includes a piezoelectric substrate (14), interdigital transducer electrodes (13) formed on the piezoelectric substrate (14), and an SiO2 film (12) formed so as to cover the electrodes (13). The acoustic wave device also includes a displacement adjustment film (11) formed on the SiO2 film (12), and the displacement adjustment film (11) is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO2 film (12). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.

Description

technical field [0001] The present invention relates to elastic wave elements mounted in mobile communication devices (high-frequency wireless communication devices) such as mobile phone terminals, PHS (Personal Handy-phone System) terminals, and wireless LAN systems. In particular, it relates to forming comb-shaped electrodes (hereinafter referred to as IDT electrodes. IDT: Interdigital Transducer) on a piezoelectric substrate, and allowing the temperature characteristics of a surface acoustic wave device to coexist with an unnecessary wave control method. The surface acoustic wave device is covered with An insulating layer is formed in the form of the comb-shaped electrodes. In addition, it relates to a communication module and a communication device including such an elastic wave element. Background technique [0002] In duplexers and RF filters used in mobile communication systems, it is required to satisfy both a wide frequency band and good temperature characteristics...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/145H10N30/00H10N30/80H03H3/08H03H9/64
CPCH03H9/02574H03H9/14541Y10T29/42
Inventor 藁科卓松田隆志井上将吾佐藤良夫
Owner TAIYO YUDEN KK