Cathode device for carrying out linear reactive sputtering film coating by utilizing electric-field confinded plasmas

Abstract

The invention relates to a cathode device for carrying out linear reactive sputtering film coating by utilizing electric-field confinded plasmas, comprising a target stand, a working gas source, a reaction gas source and a first target material and a second target material which are oppositely arranged on the target stand and respectively extend along the longitudinal direction, wherein the two opposite side wall surfaces of the first target material and the second target material respectively concave inwards to form sputtering surfaces, and a target cavity is formed between the two sputtering surfaces; the working gas source and the reaction gas source are respectively arranged at the inlet side and the outlet side of the target cavity; and on the cross section of the cathode device, theminimum distance between the two sputtering surfaces is at the outlet position of the target cavity. In the invention, the distribution of electric fields is changed by changing the shape of the target material, and the direction of the strength of the electric field in the target cavity is along the direction being vertical to the sputtering surfaces, and therefore, the plasmas are intensively confined in the central areas of the pair of target materials, which increases the density of the target materials and further improves the sputtering rate. Meanwhile, the invention also can effectively prevent reaction gas from entering the target cavity, and thereby, target poisoning is avoided.

Description

technical field [0001] The invention relates to a sputter coating cathode device. Background technique [0002] Most of the sputtering coating methods commonly used in the prior art are magnetron sputtering coating technology, that is, using a magnetic field to confine the plasma, and under low pressure, the target atoms are sputtered out by high-energy ions and deposited on the substrate to achieve the coating. the goal of. The biggest disadvantage of this method is that during reactive sputtering coating, the reactive gas source will interact with the surface of the target to oxidize it (target poisoning phenomenon). This can greatly affect the deposition rate and film properties. In recent years, a new sputtering coating method has been proposed. This method uses high-speed argon to pass between two parallel targets, and the working gas source is outside the target chamber, which is repelled by argon. , It is difficult for the working gas source to touch the target sur...

AI Technical Summary

Problems solved by technology

In order to prevent this phenomenon, Alan Delahoy et al. invented the gas disturbance method to prevent oxygen from contacting the target (US Patent 7235160), but when the target is relatively wide and the target distance is relatively small, the gas disturbance effect becomes insignificant, especially At the outlet of the argon gas, this is because the argon gas with a certain initial velocity continuously collides and rubs against the surface of the parallel target, causing the argon gas to lose energy and slow down. The speed of argon at the surface is almost reduced to zero, and the reactive gas will penetrate into the target cavity along the target surface and react with the sputtering surface of the target, causing target poisoning

In addition, since the parallel target sputtering method uses the self-generated electric field to confine the plasma, the electric field strength is very weak at the edge (exit) of the target cavity, and the plasma is easy to escape from the edge, thereby reducing the plasma density.

Therefore, the sputtering rate, that is, the deposition rate of the film is also reduced

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