Manufacture method of substrate below silica-based electrowetting microdisplay device
A technology for micro-display devices and manufacturing methods, which is applied in the direction of photolithography, instruments, optical elements, etc. on the patterned surface, and can solve the problems of complex manufacturing process, low yield rate, and restrictions on the popularization of electrowetting display devices, and achieve The effect of simple process flow and high yield rate
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Embodiment 1
[0037] The manufacturing method of the lower substrate of the silicon-based electrowetting microdisplay device of the present invention is as follows:
[0038] The first step: deposit a metal electrode layer on the silicon substrate 2: as figure 1 As shown, an ordinary silicon wafer 2 is selected as a substrate, and after cleaning, a metal Cr film is deposited on the silicon substrate 2 by magnetron sputtering with a deposition thickness of 200 nm.
[0039] Step 2: spin-coat a layer of positive photoresist on the silicon substrate 2 deposited with the Cr film, the thickness of the photoresist is 1.2 microns, and then perform drying, exposure, development and drying in sequence, and finally form a layer on the silicon substrate. The same photoresist pattern as the anode 3 pattern.
[0040] The third step: use the photoresist pattern formed as a mask to etch the Cr layer not covered by the photoresist. The etching solution is a Cr etching solution, which is 14wt.% cerium amine ...
Embodiment 2
[0045] The manufacturing method of the lower substrate of the silicon-based electrowetting microdisplay device of the present invention is as follows:
[0046] The first step: deposit a metal electrode layer on the silicon substrate 2: as figure 1 As shown, an ordinary silicon wafer 2 is selected as a substrate, and after cleaning, a metal Au film is deposited on the silicon substrate 2 by ion beam sputtering with a deposition thickness of 40 nm.
[0047] The second step: scrape-coat a layer of positive photoresist on the silicon substrate 2 deposited with the Au film, the thickness of the photoresist is 1.0 micron, and then carry out drying, exposure, development and drying in sequence, and finally form the same layer on the silicon substrate. The anode 3 pattern is the same as the photoresist pattern.
[0048] The third step: use the formed photoresist pattern as a mask to etch the Au layer not covered by the photoresist, use Au etching solution as the etching solution, and...
Embodiment 3
[0053] The manufacturing method of the lower substrate of the silicon-based electrowetting microdisplay device of the present invention is as follows:
[0054] The first step: deposit a metal electrode layer on the silicon substrate 2: as figure 1 As shown, an ordinary silicon wafer 2 is selected as the substrate, and after cleaning, a metal Pt film is deposited on the silicon substrate 2 by magnetron sputtering with a deposition thickness of 120 nm.
[0055] The second step: form a layer of positive photoresist on the silicon substrate 2 deposited with the Pt film by a combination of spin coating and scraping coating, the thickness of the photoresist is 2.0 microns, and then dry, expose, develop and dry in sequence Finally, a photoresist pattern identical to that of the anode 3 is formed on the silicon substrate.
[0056] The third step: use the formed photoresist pattern as a mask to etch the Pt layer that is not covered by the photoresist. The etching solution is a Pt etch...
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