Process for preparing low thermal resistance ceramic copper-clad plate used for IGBT (Insulated Gate Bipolar Transistor) module

A ceramic copper clad laminate and manufacturing process technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor thermal conductivity, high thermal conductivity, high void rate, etc., and achieve low thermal resistance, high thermal conductivity, The effect of low void ratio

Active Publication Date: 2010-08-25
淄博市临淄银河高技术开发有限公司
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the defects of high void rate, poor heat conduction efficiency and high heat resistance caused by the defect of process of the circuit board for IGBT module in the prior art, and provide an IGBT with low void rate, high heat conduction efficiency and low heat resistance Low thermal resistance ceramic copper clad laminate for modules

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Present embodiment technological step is as follows:

[0032] 1) Cleaning and activation of the ceramic substrate: select an alumina ceramic substrate with a thickness of 0.19 mm, and after cleaning and activation, deposit a layer of 1 μm copper film by PVD process for later use;

[0033] The cleaning and activation of the ceramic substrate adopts the existing technology. The general steps are degreasing, ultrasonic cleaning, activation, and drying.

[0034] 2) Select an oxygen-free copper foil with a thickness of 0.1 mm, and after cleaning and activation, use CVD process to alternately deposit 0.1 μm thick cuprous oxide and copper on the surface of the copper foil, and the thickness of the deposited layer is 0.5 μm;

[0035] The cleaning and activation of copper foil adopts the existing technology. Generally, water-based environmental protection cleaning solution is used for cleaning, and then activated with 5-10% hydrochloric acid solution, and then the surface is tre...

Embodiment 2

[0045] Present embodiment technological step is as follows:

[0046] 1) Ceramic substrate cleaning and activation: select an alumina ceramic substrate with a thickness of 0.5 mm, and after cleaning and activation, deposit a layer of 1.5 μm copper film by PVD process for later use;

[0047] The cleaning and activation of the ceramic substrate adopts the existing technology. The general steps are degreasing, ultrasonic cleaning, activation, and drying.

[0048] 2) Select an oxygen-free copper foil with a thickness of 0.2 mm, and after cleaning and activation, use a CVD process to alternately deposit 0.1 μm thick cuprous oxide and copper on the surface of the copper foil, and the thickness of the deposited layer is 5 μm;

[0049] The cleaning and activation of copper foil adopts the existing technology. Generally, water-based environmental protection cleaning solution is used for cleaning, and then activated with 5-10% hydrochloric acid solution, and then the surface is treated w...

Embodiment 3

[0059] Present embodiment technological step is as follows:

[0060] 1) Cleaning and activation of the ceramic substrate: select an alumina ceramic substrate with a thickness of 1.0 mm, and after cleaning and activation, deposit a layer of 2 μm copper film by PVD process for later use;

[0061] The cleaning and activation of the ceramic substrate adopts the existing technology. The general steps are degreasing, ultrasonic cleaning, activation, and drying.

[0062] 2) Select an oxygen-free copper foil with a thickness of 0.2 mm, and after cleaning and activation, use CVD process to alternately deposit 0.1 μm thick cuprous oxide and copper on the surface of the copper foil, and the thickness of the deposited layer is 10 μm;

[0063] The cleaning and activation of copper foil adopts the existing technology. Generally, water-based environmental protection cleaning solution is used for cleaning, and then activated with 5-10% hydrochloric acid solution, and then the surface is treat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
electrical resistanceaaaaaaaaaa
Login to view more

Abstract

The invention specifically relates to a process for preparing a low thermal resistance ceramic copper-clad plate used for an IGBT (Insulated Gate Bipolar Transistor) module. The process is characterized by comprising the following steps of: firstly, cleaning and activating a ceramic substrate, and depositing a layer of copper film of 1-2 micrometers on the surface of the ceramic substrate by using a PVD (Physical Vapor Deposition) process; secondly, cleaning and activating copper foil, and depositing cuprous oxide with a thickness of 0.1 micrometer and copper with a thickness of 0.1 micrometer on the surface of the copper foil by using a CVD (Chemical Vapor Deposition)process, wherein the thickness of the deposited cuprous oxide and copper is 0.5-10 micrometers; thirdly, prepressing and molding the copper foil, and placing the copper foil formed in an arc along the width direction and the ceramic substrate in a bonding furnace for high-temperature bonding at 1060-1076 DEG C; and finally, cooling the bonded copper-clad plate. Compared with a circuit board in the prior art, the copper-clad plate prepared by the process has the advantages of ultra thinness, high strength, low void ratio, high heat conduction efficiency and low thermal resistance.

Description

technical field [0001] The invention specifically relates to a manufacturing process of a low thermal resistance ceramic copper clad laminate for an IGBT module. technical background [0002] Compared with other power electronic devices, the IGBT module has been recognized for its excellent control performance and energy-saving effect in power control. At present, it has been widely used in the fields of automatic steel rolling control, electric locomotive traction, aerospace control system, and high-frequency heat treatment of metals. Compared with other power devices (such as thyristors, MOS tubes, etc.) IGBT modules have higher voltage drop and higher power consumption. Therefore, a circuit board with good thermal conductivity is needed. At present, the commonly used circuit boards are made by the following process: when bonding at high temperature, the copper foil is placed flat on the ceramic substrate. Bonding is achieved on ceramic substrates. The disadvantage of u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48
Inventor 李磊孙桂铖
Owner 淄博市临淄银河高技术开发有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap