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Polymorphic organic resistive random access memory and preparation method

A resistive variable memory, an organic technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low storage density, unfavorable high stability of organic RRAM, poor chemical stability and thermal stability, etc. Achieve the effect of low material cost, beneficial to the application of low-cost electronic devices, stable chemical properties and temperature characteristics

Active Publication Date: 2010-09-08
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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Problems solved by technology

Most of the organic materials selected for organic RRAM reported so far have poor chemical stability and thermal stability, and the storage density is relatively low. One can only achieve two-state storage, which is not conducive to the high stability of organic RRAM. , applications requiring high memory density

Method used

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  • Polymorphic organic resistive random access memory and preparation method
  • Polymorphic organic resistive random access memory and preparation method
  • Polymorphic organic resistive random access memory and preparation method

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Embodiment Construction

[0039] The present invention will be further described below in conjunction with an embodiment, but the application of the present invention is not limited to the following specific examples of implementation.

[0040] In the present invention, the process flow for preparing the multi-state organic resistive variable memory is as follows:

[0041] (1) On the glass substrate, by thermal evaporation (vacuum degree is 4.5×10 -4 Pa) or other commonly used IC deposition methods, deposit a layer of Al (thickness 100-200nm) as the bottom electrode.

[0042] (2) Using the thermal evaporation method with a mask, the vacuum degree is 4.5×10 -4 At about Pa, a layer of titanyl phthalocyanine thin film (thickness 100-150nm) is evaporated at 200°C-250°C. And the lead-out hole of the bottom electrode is formed.

[0043] (3) The pattern is defined by photolithography, and the non-metal doped area is protected with photoresist. Thermally evaporate a layer of Cu or Ag (1-3nm) to remove the ph...

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Abstract

The invention provides a polymorphic organic resistive random access memory and a preparation method, and belongs to the technical field of a super-large-scale integrated circuit. The organic resistive random access memory comprises a substrate, a bottom electrode on the substrate, a middle organic function layer and a top electrode; and the middle organic function layer is a titanyl phthalocyanine film which contains a metal Cu or Ag nano filament. Two resistance switching mechanisms are introduced: the first one is that the metal Cu or Ag nano filament is fused to form a closed state by adding enough positive pressure to the top electrode, and after negative pressure is added, the metal Cu or Ag nano filament is formed again to be converted into an open state; and the second one is that the resistance switching is realized by the positive operation and the reverse operation of an oxidation reduction reaction of the top electrode and the organic film. The polymorphic organic resistive random access memory realizes the polymorphic resistance switching characteristic and the multi-value memory function, and has very high application value in the aspect of the organic memory with low cost and high performance.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuits, and in particular relates to an organic resistive variable memory and a preparation method thereof. Background technique [0002] In today's digital age of information explosion, people's production and life cannot do without high-density, high-speed memory. At present, the most widely used and most developed non-volatile memory is a flash memory (flash memory) device. With the advancement of microelectronic technology nodes, flash memory based on the traditional floating gate structure is approaching its physical limit, seriously affecting the storage function of the unit, and unable to follow the footsteps of Moore's Law for integrated circuits. A new generation of resistive memory (RRAM) with higher storage density, faster response speed, lower operating voltage, and simpler manufacturing process has emerged. Because of its potential to replace flash memory, it h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
Inventor 于哲黄如邝永变张丽杰高德金
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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