Silicon controlled rectifier electro-static discharge protective circuit structure triggered by diode

A technology for protecting circuits and electrostatic discharge, which is applied in the electronic field and can solve problems such as unfavorable protection of internal circuit devices
CN101840918AInactive Publication Date: 2010-09-22UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2010-09-22
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to a silicon controlled rectifier (SCR) electro-static discharge (ESD) protective circuit structure triggered by a diode, which belongs to the technical field of the electron. The invention converts a trigger voltage of a conventional SCR ESD protective circuit structure into a N+ / P-well (or N-well / P+) junction breakdown voltage from a P-well / N-well junction breakdown voltage by integrating the diode with lower breakdown voltage so as to reduce the trigger voltage of the SCR ESD protective circuit structure and finally play a role of well protecting an internal circuit of a chip. Meanwhile, under the premise of not changing the trigger voltage, the silicon controlled rectifier (SCR) electro-static discharge (ESD) protective circuit structure can obtain an adjustable device maintaining voltage by simply adjusting size parameters of devices. The invention is compatible with a CMOS process, also can adopt processes of BiCMOS, BCD, SOI and the like, can connect the protective circuit structure provided by the invention between a power of an integrated circuit and the ground to serve as the ESD protection of a Power Clamp and also can connect the protective circuit structure among an input port and an output port of the integrated circuit and the power (the ground) to serve as the ESD protection of the input port and the output port.
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Description

technical field

[0001] The invention belongs to the field of electronic technology, and relates to a protection circuit for electrostatic discharge (ESD for short) in an integrated circuit, in particular to a silicon controlled rectifier (Semiconductor Controlled Rectifier, SCR for short) electrostatic discharge circuit structure. Background technique

[0002] Electrostatic discharge is a common phenomenon in the process of manufacturing, producing, assembling, testing, storing, and transporting semiconductor devices or circuits. The excess charge it brings will pass through the I The / O pin is passed into the integrated circuit and destroys the internal circuit of the integrated circuit. In order to solve this problem, manufacturers usually set up a protection circuit between the internal circuit and the I / O pin. This protection circuit must be activated before the pulse current of electrostatic discharge reaches the internal circuit to quickly eliminate the excessive volta...

Claims

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