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Piezoelectric film bulk acoustic wave sensor with polygonal electrodes

A thin-film bulk acoustic wave and piezoelectric thin-film technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, using sound waves/ultrasonic waves/infrasonic waves to analyze fluids, etc., can solve production costs Improvement, complex device processing technology, complex electrode shape and other problems, to achieve the effect of simple structure

Inactive Publication Date: 2010-09-29
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the performance of the piezoelectric resonator designed by this method has been improved, the shape of the electrode obtained by this method is relatively complicated, resulting in complicated device processing technology and increased production costs.

Method used

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  • Piezoelectric film bulk acoustic wave sensor with polygonal electrodes
  • Piezoelectric film bulk acoustic wave sensor with polygonal electrodes
  • Piezoelectric film bulk acoustic wave sensor with polygonal electrodes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Piezoelectric film bulk acoustic wave sensors with single-sided pentagonal electrodes and single-sided all-metal electrodes.

[0026] 1. Select a p-type (100) crystal-oriented Si substrate (1), and wash it with acetone, absolute ethanol and deionized water in sequence;

[0027] 2. Deposit the metal lower electrode (2), and form the pentagonal metal lower electrode by photolithography and etching;

[0028] 3. Using the magnetron sputtering method, using high-purity Al as the target material, Ar and N 2 Depositing an AlN piezoelectric thin film (3) with a preferred orientation parallel to the c-axis for the reaction gas, and photoetching and etching the AlN film layer to expose the leads of the pentagonal metal lower electrode;

[0029] 4. Deposit a single-sided all-metal upper electrode (4) covering the upper surface of the AlN film, and lead the upper electrode to the lower surface of the AlN film to connect to the external circuit;

[0030] 5. Deposit a layer of sens...

Embodiment 2

[0032] Piezoelectric film bulk acoustic wave sensor with double-sided pentagonal metal electrodes.

[0033] 1. Select a p-type (100) crystal-oriented Si substrate (1), and wash it with acetone, absolute ethanol and deionized water in sequence;

[0034] 2. Deposit the pentagonal metal lower electrode (2), and form the pentagonal metal lower electrode by photolithography and etching;

[0035] 3. Using the magnetron sputtering method, using high-purity Al as the target material, Ar and N 2 Depositing an AlN piezoelectric thin film (3) with a preferred orientation parallel to the c-axis for the reaction gas, and photoetching and etching the AlN film layer to expose the leads of the pentagonal metal lower electrode;

[0036] 4. Deposit a pentagonal metal upper electrode (6), and form a pentagonal metal upper electrode by photolithography and etching;

[0037] 5. Deposit the sensitive film Au(7), and form a sensitive film with the same shape and area as the pentagonal metal upper ...

Embodiment 3

[0039] Piezoelectric film bulk acoustic wave sensor with double-sided circular metal electrodes.

[0040] 1. Select a p-type (100) crystal-oriented Si substrate (1), and wash it with acetone, absolute ethanol and deionized water in sequence;

[0041] 2. Deposit a circular metal lower electrode (8), and form a circular metal lower electrode by photolithography and etching;

[0042] 3. Using the magnetron sputtering method, using high-purity Al as the target material, Ar and N 2 Depositing an AlN piezoelectric film (3) with a preferred orientation parallel to the c-axis for the reaction gas, and photolithography and etching the AlN film layer to expose the lead of the circular metal lower electrode;

[0043] 4. Deposit a circular metal upper electrode (9), and form a circular metal upper electrode by photolithography and etching;

[0044] 5. Deposit a sensitive film of Au(10), and form a sensitive film with the same shape and area as the circular metal upper electrode by photo...

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Abstract

The invention provides a piezoelectric film bulk acoustic wave sensor with polygonal electrodes, comprising a substrate, a piezoelectric film, an upper metal electrode and a lower metal electrode which are distributed on the two surfaces of the piezoelectric film, an electrode lead and a sensitive film covering the surface of the upper electrode, wherein one or both of the upper electrode and the lower electrode on the piezoelectric film is / are polygon(s); and for the polygon, any two edges are not parallel, the inner angles are all obtuse angles, and the number of the edges is less than 10, wherein the effect of a regular pentagon is best. The piezoelectric film bulk acoustic wave sensor reduces microwave signals from generating stronger reflection at parallel edges and the acute angles or right angles, enhances vibrating efficiency of acoustic wave, improves quality factors and testing sensitivity of devices, and increases the load testing range of the sensor. Simultaneously, the sensor also has the advantages of simple structure, convenient manufacture, high reliability and capability of adopting micromachining (MEMS) process flow for manufacturing and the like, and also can be used for other acoustic wave resonators and sensors.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical systems (MEMS), and in particular relates to a piezoelectric thin-film bulk acoustic wave sensor with polygonal electrodes suitable for liquid and gas detection. Background technique [0002] Bulk acoustic wave sensor is a kind of general physical, chemical and biological sensor, which has the advantages of simple operation, fast response, high sensitivity and no need for labeling. Application prospect. The use of micro-electro-mechanical system (MEMS) technology promotes the development of bulk acoustic wave sensor technology to miniaturization, integration and intelligence, and also has the advantages of low cost, low power consumption, and easy integration. [0003] When bulk acoustic waves are used for gas and special substance detection, either longitudinal wave vibration mode or shear wave vibration mode can be used. However, in order to reduce the scattering of acoustic wave energy ...

Claims

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Application Information

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IPC IPC(8): G01N29/036B81B3/00
Inventor 顾豪爽熊娟吴雯杜鹏飞胡明哲胡永民
Owner HUBEI UNIV
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