Faraday device used for detecting implantation dose of plasma
A technology of immersion injection and plasma, applied in the field of semiconductor doping, can solve problems such as the influence of Faraday cup detection results, and achieve the effects of convenience, improved detection accuracy, and easy installation and replacement.
Active Publication Date: 2010-09-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Such an environment has a serious impact on the Faraday cup test results
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0035] An embodiment will now be described in conjunction with the accompanying drawings, so as to have a detailed understanding of the present invention, but not as a limitation to the present invention, and the sizes in the accompanying drawings are not taken as the dimensions of the specific implementation. However, any obvious modification, recombination or non-essential change of the present invention shall be regarded as the protection scope of the appended claims of the present invention. The labels of the schematic diagrams are consistent, and the same labels are used for the same structure.
[0036] figure 1 is a schematic diagram of the plasma immersion implantation system provided by the present invention. 12...
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The invention discloses a Faraday device used for detecting implantation dose of plasma. The device comprises a Faraday cup and a protection ring, wherein the Faraday cup is used for converting a collected ion current into an electric signal; and the protection ring is used for providing support for the installation of the Faraday cup. The Faraday cup consists of a cup body and a cup mouth; the cup body is provided with a three-layer structure, namely an outer conductive layer, a cup body insulating layer and an inner conductive layer on electric performance, wherein the outer conductive layer is used for shielding; the cup body insulating layer is used for isolating the inner conductive layer and the outer conductive layer; the inner conductive layer is used for acquiring signals; the cup mouth is provided with the three-layer structure, namely an upper conductive layer, a cup mouth insulating layer and a lower conductive layer on the electric performance, wherein the upper conductive layer is used for connecting a negative bias; the cup mouth insulating layer is used for isolating the upper conductive layer and the lower conductive layer; and the inner conductive layer is used for collecting secondary electrons which run to the cup mouth from the inside of the Faraday cup. Due to the adoption of the device, the accuracy of a Faraday detection result is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor doping, in particular to a Faraday device for plasma immersion implant dose detection. Background technique [0002] In the semiconductor process, the mainstream impurity doping technology adopts ion implantation technology (also known as beamline ion implantation), this method is to generate plasma by ion source, and then extract the required ion components through mass spectrometry analysis , the ions are accelerated to a certain energy and implanted into the semiconductor substrate (such as a silicon wafer). This method requires complex mass spectrometry and scanning devices, low injection efficiency, complex structure, and extremely high cost. [0003] With the further shrinking of the feature size of integrated circuits, the ion implantation energy needs to be further reduced to below 1000 electron volts (sub-KeV). Negative effect. Therefore, a new plasma immersion implantation techn...
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Login to View More IPC IPC(8): H01J37/244H01J37/02H01L21/66
Inventor 汪明刚刘杰夏洋李超波陈瑶赵丽莉
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI