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GaN-based LED epitaxial wafer and growing method thereof

An LED epitaxial wafer, GaN-based technology, applied in gaseous chemical plating, coating, electrical components, etc., can solve the problem that the antistatic ability of GaN-based LED chips is limited, and the dislocation of GaN-based epitaxial layers is not greatly reduced. Density and stress, etc., to achieve the effect of reducing dislocation density and improving working life

Inactive Publication Date: 2010-09-29
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These two methods improve the crystal quality in the epitaxial layer after the growth of non-doped gallium nitride, and do not greatly reduce the dislocation density and stress in the GaN-based epitaxial layer, so the antistatic ability of GaN-based LED chips is improved. limited

Method used

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  • GaN-based LED epitaxial wafer and growing method thereof
  • GaN-based LED epitaxial wafer and growing method thereof
  • GaN-based LED epitaxial wafer and growing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1 Using MOCVD to grow epitaxial wafers, grow sequentially from bottom to top:

[0025] 1. Put the sapphire substrate with (0001) crystal orientation into the reaction chamber, and then 2 The temperature in the environment is raised to 1050° C., stabilized for 10 minutes, and the substrate is purified at high temperature.

[0026] 2. Lower the temperature to 530° C. to grow a low-temperature GaN-based buffer layer with a thickness of 20 nm.

[0027] 3. Raise the temperature to 1100° C., keep the pressure at 500 Torr, and grow a first non-doped GaN layer with a thickness of 500 nm.

[0028]4. At 1100° C., a second non-doped GaN layer with a thickness of 1.5 μm is grown at a reduced pressure of 300 Torr.

[0029] 5. An n-type GaN layer with a thickness of 1.5 μm is grown at 1100° C.

[0030] 6. In N 2 The multi-quantum well layer is grown for 5 periods in the environment, the GaN barrier layer: the thickness is 20nm, the growth temperature is 850°C; the InGa...

Embodiment 2

[0036] Embodiment 2 Using MOCVD to grow epitaxial wafers, grow sequentially from bottom to top:

[0037] 1. Put the sapphire substrate with (0001) crystal orientation into the reaction chamber, and then 2 The temperature in the environment is raised to 1250° C., stabilized for 5 minutes, and the substrate is purified at high temperature.

[0038] 2. Lower the temperature to 540° C. to grow a low-temperature GaN-based buffer layer with a thickness of 30 nm.

[0039] 3. Raise the temperature to 1200° C. and increase the pressure to 400 Torr to grow a first non-doped GaN layer with a thickness of 400 nm.

[0040] 4. At 1200° C., reduce the pressure to 200 Torr to grow a second non-doped GaN layer with a thickness of 1.6 μm.

[0041] 5. Grow n-type GaN with a thickness of 2 μm at 1200°C.

[0042] 6. In N 2 The multi-quantum well layer is grown for 15 cycles in the environment, the GaN barrier layer: the thickness is 13nm, the growth temperature is 950°C; the InGaN well layer: ...

Embodiment 3

[0049] Embodiment 3 Using MOCVD to grow epitaxial wafers, grow sequentially from bottom to top:

[0050] 1. Put the sapphire substrate with (0001) crystal orientation into the reaction chamber, and then 2 The temperature in the environment is raised to 1150° C., stabilized for 7 minutes, and the substrate is purified at high temperature.

[0051] 2. Lower the temperature to 550° C. to grow a low-temperature GaN-based buffer layer with a thickness of 25 nm.

[0052] 3. Raise the temperature to 1180° C. and increase the pressure to 300 Torr to grow a first non-doped GaN layer with a thickness of 50 nm.

[0053] 4. At 1180° C., reduce the pressure to 150 Torr to grow a second non-doped GaN layer with a thickness of 1.95 μm.

[0054] 5. A 3 μm thick n-type GaN layer was grown at 1180° C.

[0055] 6. In N 2 The multi-quantum well layer is grown for 10 periods in the environment, the GaN barrier layer: the thickness is 15nm, the growth temperature is 850°C; the InGaN well layer:...

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Abstract

The invention relates to a GaN-based epitaxial wafer and a growing method thereof. The structure of the epitaxial wafer sequentially comprises a sapphire substrate, a low-temperature GaN buffer layer, a non-doping GaN layer, an n-type GaN layer, a multiquantum well layer, a p-type AlGaN layer, a p-type GaN layer and a high-doping p-type GaN electrode contacting layer from bottom to top. The non-doping GaN layer contains a first non-doping GaN layer and a second non-doping GaN layer, and the first non-doping GaN layer and the second non-doping GaN layer are grown under different pressures. The combination of the first non-doping GaN layer and the second non-doping GaN layer can relieve the stress of a GaN epitaxial layer caused by lattice mismatching of the substrate and the GaN material and reduce the dislocation density of the GaN epitaxial layer, and the linear defect density of the GaN epitaxial layer can be reduced to 1*10<8> / cm<3>, therefore, the important technical indexes such as the service life, the antistatic capability, the reverse characteristic and the like of a light emitting diode can be effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an LED epitaxial wafer and a growth method thereof, in particular to a gallium nitride-based LED epitaxial wafer containing two non-doped GaN layers and a growth method thereof. technical background [0002] GaN-based materials, including InGaN, GaN, AlGaN, and AlInGaN alloys, are direct bandgap semiconductors, and the bandgap is continuously adjustable from 1.8 to 6.2eV. It is the preferred material for the production of high-brightness blue, green and white LEDs, and the products are widely used Used in large-screen color display, vehicle and traffic signals, indoor and outdoor decorative lighting, landscape decorative lighting, signs and signs, solar street lights, intelligent traffic control and general lighting and other projects, as well as indicating light sources for mobile phones, computers, audio and home appliances. [0003] GaN-based materials are mostly grown on...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/205C23C16/18C23C16/34C23C16/44
Inventor 高凡杨天鹏郭文平陈向东柴旗肖志国
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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