Method for synthesizing high-purity arsine

An arsine and high-purity technology, which is applied in the field of electronic gas synthesis and purification, can solve the problems that the purity of arsine cannot reach the international level, and achieve the effect of long service life

Inactive Publication Date: 2010-10-13
武峰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the shortcoming that the purity of arsine produced by our current preparation process cannot reach the international level of 5N (99.999%) and 6N (99.9999%), and discloses a new method for synthesizing high-purity arsine

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0022] A method for synthesizing high-purity arsine, comprising the steps of:

[0023] (1) The synthesis process of crude arsine: first make zinc arsenide with arsenic powder and zinc powder, and then react with dilute sulfuric acid to obtain crude arsine; the specific steps are: fully stir the arsenic powder and zinc powder Put it in a vacuumized reactor, fill it with high-purity inert gas argon to normal pressure, and then heat it to 400-450°C, and react at this temperature to form zinc arsenide;

[0024] Place the generated zinc arsenide in the arsine reactor protected by nitrogen after vacuuming, then put the prepared dilute sulfuric acid in the acid storage tank, then gradually add dilute sulfuric acid into the arsine reactor, stir, and make Zinc arsenide reacts completely with dilute sulfuric acid to produce crude arsine.

[0025] (2) Purification process of high-purity arsine: the crude arsine obtained in step (1) is separated with a liquid nitrogen cold trap in a low-...

Embodiment 2

[0028] The operation process of this embodiment is the same as that of Example 1, the difference is that the high-purity inert gas charged in the reactor is nitrogen when zinc arsenide is synthesized in the synthesis process of step (1) crude arsine in this embodiment, and the electric Heating to 410-430°C.

Embodiment 3

[0030] The operation process of this example is the same as that of Example 1, the difference is that in the step (1) in this example, during the synthesis of crude arsine, the zinc arsenide is synthesized by electric heating to 420-440°C.

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PUM

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Abstract

The invention relates to a method for synthesizing high-purity arsine, which belongs to the technical field of electron gas synthesization and purification. The method includes the following steps: (1) crude arsine synthesization process: first producing arsenic powder and zinc powder into zinc arsenide, which then reacts with dilute sulphuric acid to produce crude arsine; and (2) high-purity arsine purification process: carrying out liquid nitrogen cold trap low-temperature vacuum separation, molecular sieve adsorption and drying and gallium-indium alloy deep absorption for dehydration and deoxidation on the crude arsine. The method can deeply remove oxygen, water, carbon dioxide and other harmful impurities in electronic material, which normally can reach less than 0.01 to 0.1ppm; and gallium-indium alloy as the main body of purifying agent can be reused, and theoretically has a long service life except slight loss in chemical treatment.

Description

technical field [0001] The invention belongs to the technical field of electronic gas synthesis and purification, and in particular relates to a method for synthesizing high-purity arsine. Background technique [0002] Electronic gas is an indispensable raw material for the production of electronic industries such as VLSI, flat-panel display devices, compound semiconductor devices, solar cells, and optical fibers. They are widely used in thin film, etching, doping, vapor deposition, and diffusion processes. For example, in the wafer manufacturing process of VLSI factories with relatively advanced process technology, there are more than 450 process steps, of which about 50 different types of electronic gases are used. Arsane is one of the very important group five elements in the electron gas. AsH3 is an important electronic special gas. It is mainly used in the semiconductor industry for N-type doping of epitaxial silicon, N-type diffusion in silicon, ion Implantation and g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G28/00
Inventor 尹恩华武峰巩建民
Owner 武峰
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