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Integration method of high-reliability power hybrid integrated circuit

A hybrid integrated circuit and integrated method technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of heat dissipation speed on the back of the substrate, sintering bubbles and pinholes in the thick film silver metal layer, and improve adhesion and heat. The effect of transferring, enhancing adhesion and heat dissipation, and ensuring compactness

Inactive Publication Date: 2010-10-20
GUIZHOU ZHENHUA FENGGUANG SEMICON
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Problems solved by technology

[0009] The purpose of the present invention is to provide a method for integrating high reliable power hybrid integrated circuits, so as to completely solve the problem of the heat dissipation speed on the back of the substrate, the problems of the thick-film silver metal layer and the problems of air bubbles and pinholes during sintering

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  • Integration method of high-reliability power hybrid integrated circuit

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Embodiment

[0024] Guizhou Zhenhua Fengguang Semiconductor Co., Ltd. developed a highly reliable power hybrid integrated circuit for the FX0041 power operational amplifier. The integration method is:

[0025] (1) First prepare the substrate: substrate cleaning and drying, including printing and drying of thick film conductor paste (150°C, 10min), sintering conductor (875°C, 12min, total time 45min), printing and drying Resistor paste (150°C, 10min), sintering resistor (850°C, 10min, total time 35min); adjusting resistor (laser trimming), glass glaze printing and drying (150°C, 10min), sintering glass glaze (500 ℃, 10min, the total time is 30min), forming the conductor pattern of the pad (bonding area); the substrate is then cleaned and dried (100℃, 30min);

[0026] (2) Position, align and fix in the special stainless steel fixture, and place it in the magnetron sputtering table for installation and fixation; place cleaned and dried Cu, Ni-Cr, Au in the position of the sputtering source, a...

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Abstract

The invention discloses an integration method of a high-reliability power hybrid integrated circuit. The method comprises the following steps of: (1) firstly, washing an original thick film substrate with ultra sound and drying; (2) forming a multilayer Cu-Ni-Cr-Au composite film at the back of a ceramic substrate in a high-vacuum magnetically-controlled sputtering platform in one step by using a high-vacuum sputtering method; (3) selectively sputtering another Cu-Ni-Cr-Au composite film again on the basis so that a multilayer metal film grooved mesh is formed in a selected region; (4) then, annealing at a high temperature to obtain a thick film substrate; and (5) assembling the thick film substrate on a shell base, assembling a semiconductor chip and other separate devices, bonding with silicon-aluminum wires to connect the circuit and seal a lid to obtain a made high-reliability power hybrid integrated circuit. The integrated circuit made by the method has favorable welding system compactness, adhesion, heat conductivity, rapid radiation and circuit reliability and is widely applied to the fields of aerospace, aviation, ships, precise instruments, geological exploration, oil exploration, communication, and the like.

Description

technical field [0001] The present invention relates to integrated circuits, in particular, to high reliability power hybrid integrated circuits. Background technique [0002] Due to the large operating current of the circuit, the power hybrid integrated circuit generally adopts the method of thick film hybrid integration for integration, that is, the front of the ceramic substrate is formed by thick film paste screen printing, thick film sintering, laser trimming and other methods. Resistors, capacitors, inductors and conduction band networks, in order to increase the adhesion between the substrate and the metal tube base, a thick film is formed on the back of the thick film substrate by screen printing with thick film paste and sintered at high temperature A metal layer, usually silver paste, acts as a transition layer between the substrate and the metal base to improve the adhesion between the substrate and the metal base. In power hybrid integrated circuits, semiconduct...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L21/60
CPCH01L2924/0002
Inventor 杨成刚苏贵东周正钟
Owner GUIZHOU ZHENHUA FENGGUANG SEMICON
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