Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Feature forming process using plasma treatment

A plasma and component technology, applied in the fields of electric solid state devices, semiconductor devices, semiconductor/solid state device manufacturing, etc., can solve problems such as the inability to achieve high electrical conductivity

Inactive Publication Date: 2010-11-17
XEROX CORP
View PDF11 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For aged silver-containing nanoparticles, this conventional method may not achieve high conductivity
Furthermore, for some applications such as high-speed fabrication of flexible devices on PET substrates, the conventional methods may not be able to achieve high conductivity at lower temperatures and shorter processing times

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Feature forming process using plasma treatment
  • Feature forming process using plasma treatment
  • Feature forming process using plasma treatment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] The aforementioned low-conductivity thin film was immersed in a 0.1 M acetic acid toluene solution for 5 minutes. After rinsing with toluene, the membrane was dried at 140 °C for 1 min to yield a 2.84×10 4 Highly conductive film with a conductivity of S / cm. The conductivity increased by 5 orders of magnitude.

Embodiment 2

[0086] Similar to Example 1, the low-conductivity thin film was dipped in a 0.02 M solution of dilute acetic acid in toluene for 5 minutes. After rinsing with toluene, the membrane was dried at 140 °C for 1 min to obtain a 2.21×10 4 High conductivity thin film with conductivity of S / cm. Even with very dilute acid solutions, the conductivity increased by 5 orders of magnitude.

Embodiment 3

[0090] The low-conductivity thin film in Comparative Example 2 was immersed in a 0.5 M acetic acid toluene solution for 5 minutes. After rinsing with toluene, the membrane was dried at 120 °C for 1 min to obtain a 2.4×10 4 A highly conductive film with a conductivity of S / cm, the conductivity has increased by 5-6 orders of magnitude. This also indicates that lower heating temperatures can be used with the acid treatment method.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A process comprising: (a) forming a feature comprising uncoalesced silver-containing nanoparticles; (b) heating the uncoalesced silver-containing nanoparticles to form coalesced silver-containing nanoparticles; and (c) subjecting to a plasma treatment the uncoalesced silver-containing nanoparticles or the coalesced silver-containing nanoparticles, or both the uncoalesced silver-containing nanoparticles and the coalesced silver-containing nanoparticles, wherein the feature prior to the action (c) exhibits a low electrical conductivity but the electrical conductivity of the feature subsequent to the actions (b) and (c) is increased by at least about 100 times, wherein the action (c) is undertaken during one or more of prior to the heating, or during the heating, or after the heating.

Description

[0001] References to related applications [0002] "FEATURE FORMING PROCESS USINGACID-CONTAINING COMPOSITION" by Yiliang Wu et al. (attorney case number 20081055-US-NP), application date March 5, 2009, U.S. serial number 12 / 398611. Background technique [0003] There is a lot of interest in processing electronic circuit components using liquid deposition techniques because such techniques are used in electronic applications such as thin-film transistors (TFTs), light-emitting diodes (LEDs), large-area flexible displays and signs, radio frequency identification (RFID) tags Conventional mainstream amorphous silicon technology for , optoelectronic devices, sensors, etc. provides a possible low-cost alternative technology. However, the deposition and / or patterning of functional electrodes, pixel pads and traces, lines and tracks to meet practical application conduction, processing and cost requirements is a great challenge. . [0004] The use of solution-processable conductors ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00H01L51/40B22F1/0545
CPCB22F7/06H01L51/0541B22F2003/241H01L51/0545B22F2999/00B22F3/24B22F2998/00H01L51/102H01L51/0021B82Y30/00B22F1/0545H10K71/60H10K10/466H10K10/464H10K10/82B22F2202/13H10K10/481
Inventor Y·吴M·莫卡塔利
Owner XEROX CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com