Detergent composition for photoresists

Abstract

The invention discloses a detergent composition for photoresists. The detergent composition for the photoresists comprises quaternary ammonium hydroxide, aryl alcohol, dimethyl sulfoxide, corrosion inhibitor and water, wherein the corrosion inhibitor contains one or more of boric acid, borate and boric acid ester. The detergent for the photoresists can remove the photoresists (particularly thick-film negative photoresists) with the thickness of more than 20 mu m and other etching residues on base materials such as metals, metal alloys, dielectrics and the like, and has lower corrosivity to metals such as aluminum, copper and the like and nonmetallic materials such as silicon dioxide and the like, so that the detergent composition for the photoresists has good application prospect in the fields of cleaning microelectronics such as semiconductor chips and the like.

Description

technical field [0001] The invention relates to a cleaning agent composition in a semiconductor manufacturing process, in particular to a photoresist cleaning agent composition. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist coating is first formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and then exposed and developed using an appropriate mask. According to the photoresist used To remove the exposed or unexposed part of the photoresist, form a photoresist pattern at the required position, and then perform plasma etching or reactive gas etching on the photoresist pattern to perform pattern transfer. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. Negative photoresists with a thickness of more than 20 μm are gradually being used in the semiconductor wafer manufacturing process. At present, most photore...

AI Technical Summary

Problems solved by technology

[0016] Therefore, the technical problem to be solved by the present invention is to provide a thick-film photoresist cleaning agent with insufficient cleaning ability or strong corrosion to semiconductor wafer patterns and substrates in existing thick-film photoresist cleaning agents. Photoresist cleaning agent composition with strong resist cleaning ability and low corrosion to semiconductor wafer patterns and substrates

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