Method for preparing suspension micro-sensitive structure based on aluminum sacrificial layer process

A sensitive structure and sacrificial layer technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as bulk silicon damage, low yield, and narrow space structures

Inactive Publication Date: 2010-12-15
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, increasing the mechanical constraints will inevitably lead to a decrease in the performance of the micromechanical sensor. At the same time, due to the small internal space and relatively closed structure of the glass-silicon-glass sandwich structure, the current sacrificial layer technology for this structure is not mature. Now some Technology h

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  • Method for preparing suspension micro-sensitive structure based on aluminum sacrificial layer process
  • Method for preparing suspension micro-sensitive structure based on aluminum sacrificial layer process
  • Method for preparing suspension micro-sensitive structure based on aluminum sacrificial layer process

Examples

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Embodiment 1

[0028] The preparation method of the suspended micro-sensitive structure based on the aluminum sacrificial layer technology in this embodiment, the steps are as follows:

[0029] Step 1: Etch three 120nm-deep electrode grooves 3 on the surface of the top glass 1 and the bottom glass 2 respectively with buffered hydrofluoric acid BHF wet method, each electrode groove 3 has an outwardly extending Lead groove 60, and in order from left to right, the size and longitudinal position of each pair of electrode grooves 3 corresponding to the top glass 1 and the bottom glass 2 are consistent, so that each pair of electrode grooves 3 constitutes a differential electric groove groove, and then sputter 170nm thick titanium gold alloy in each electrode groove 3 to form four electrodes 41, and sputter outwardly extending leads 42 into the corresponding electrode groove 3 on the outer side of each electrode 41 lead groove 60, the width of each lead 42 is 35 μm, and the interval between adjace...

Embodiment 2

[0040] The preparation method of the suspended micro-sensitive structure based on the aluminum sacrificial layer technology in this embodiment, the steps are as follows:

[0041] Step 1: Etch three 140nm-deep electrode grooves 3 on the surface of the top glass 1 and the bottom glass 2 respectively with buffered hydrofluoric acid BHF wet method, each electrode groove 3 has an outwardly extending Lead groove 60, and in order from left to right, the size and longitudinal position of each pair of electrode grooves 3 corresponding to the top glass 1 and the bottom glass 2 are consistent, so that each pair of electrode grooves 3 constitutes a differential electric groove groove, and then sputter 190nm thick titanium gold alloy in each electrode groove 3 to form four electrodes 41, and sputter outwardly extending leads 42 into the corresponding electrode groove 3 on the outer side of each electrode 41 lead groove 60, the width of each lead 42 is 40 μm, and the interval between adjace...

Embodiment 3

[0052] The preparation method of the suspended micro-sensitive structure based on the aluminum sacrificial layer technology in this embodiment, the steps are as follows:

[0053] Step 1: Etch three 155nm-deep electrode grooves 3 on the surface of the top glass 1 and the bottom glass 2 respectively with buffered hydrofluoric acid BHF wet method, and the outer side of each electrode groove 3 has an outwardly extending Lead groove 60, and in order from left to right, the size and longitudinal position of each pair of electrode grooves 3 corresponding to the top glass 1 and the bottom glass 2 are consistent, so that each pair of electrode grooves 3 constitutes a differential electric groove groove, and then sputter 205nm thick titanium gold alloy in each electrode groove 3 to form four electrodes 41, and sputter outwardly extending leads 42 into the corresponding electrode groove 3 on the outer side of each electrode 41 lead groove 60, the width of each lead 42 is 45 μm, and the i...

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Abstract

The invention discloses a method for preparing a suspension micro-sensitive structure based on an aluminum sacrificial layer process. The method comprises the following steps of: introducing a sacrificial layer into a three-layer suspension micro-sensitive structure to restrict a micro-sensitive suspension mass block during the processing, and connecting the suspension micro-sensitive structure and bulk silicon by using an aluminum light film so as to avoid influence of subsequent processing on the suspension structure; removing the sacrificial layer by wet etching; and finally replacing an etching solvent with clean water and ethanol, and drying. The method effectively ensures the integrity and mobility of the suspension micro-sensitive structure without changing the conventional process flow, does not reduce the performance of a micro-mechanical sensor because the mechanical restriction is not increased, reduces the process difficulty, improves the yield and can be widely used for processing various silicon micro-components with the suspension micro-sensitive structure.

Description

technical field [0001] The invention relates to the field of preparation technology for micro-silicon device processing, in particular to a method for preparing a suspended micro-sensitive structure based on an aluminum sacrificial layer technology. Background technique [0002] Micro-silicon electromechanical processing technology is the mainstream technology of micro-electro-mechanical systems MEMS developed with integrated circuit technology in recent years. Micro-silicon devices are manufactured using micro-electromechanical system microelectronics and micro-machining technology. It has small size, light weight, low cost, low power consumption, high reliability, suitable for mass production, easy integration and realizable Intelligent features. At the same time, the feature size on the order of microns enables it to perform functions that some traditional mechanical sensors cannot achieve, so microelectronics and micromachining technology of microelectromechanical syste...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 董景新王嫘韩丰田刘云峰
Owner TSINGHUA UNIV
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