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Method for preparing silicon crystal D1 line luminous material at room temperature by Si+ self implantation

A luminescent material and self-injection technology, applied in the field of optoelectronics, can solve problems such as no public reports, and achieve the effects of simple process, stable luminescence and low cost

Inactive Publication Date: 2010-12-15
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Through document retrieval, do not see the public report identical with the present invention

Method used

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Embodiment 1

[0019] The present invention is a kind of using Si + Self-implantation forms room temperature efficient D in crystalline silicon 1 Line glow new technology. By self-implanting Si into the silicon crystal + , to obtain D 1 Strongly luminescent room temperature working silicon material, the specific steps are as follows:

[0020] Step 1: Select a P-type single crystal Si wafer with a crystal orientation of (100), and polish it on one side.

[0021] Step 2: Treat the silicon base material with existing methods

[0022] A. Select the Si substrate material with a crystal orientation of 100, and wash it with toluene, acetone, and absolute ethanol for 15 minutes respectively to remove organic and inorganic impurities on the substrate surface;

[0023] B. Wash the cleaned Si substrate material first with H 2 SO 4 :H 2 o 2 = 4:1 solution boiled for 10 minutes, then HF:H 2 o 2 = Soak in 1:9 solution for 20s-40s;

[0024] C. The Si base material after the above-mentioned step...

Embodiment 2

[0033] Step 1, step 2, and step 4 are the same as in embodiment 1.

[0034] Step 3:

[0035] Si by ion implanter + Self-implanted silicon substrate with an injection dose of 10 14 cm -2 , the implantation energy is 200keV, the angle between the silicon wafers in the ion beam is 7°, and the polished surface is implanted. The entire implantation process is carried out in a vacuum and room temperature environment.

Embodiment 3

[0037] Basically with embodiment 1. The differences are:

[0038] Si by ion implanter + Self-implanted silicon substrate with an injection dose of 10 15 cm -2 , the implantation energy is 200keV, the angle between the silicon wafers in the ion beam is 7°, and the polished surface is implanted. The entire implantation process is carried out in a vacuum and room temperature environment.

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Abstract

The invention relates to a method for preparing a silicon crystal D1 linear luminous material at room temperature by Si+ self implantation, and belongs to the technical field of photoelectronics. The method comprises the following steps of: a, self-implanting Si+ serving as implantation ions into a silicon chip processed by the conventional method by using an ion implanter, wherein the implantation amount is 1,012 to 1,016cm<2>, the implantation energy is 100 to 300keV, and the whole implantation process is carried out in vacuum and room temperature environment; and b, performing high-temperature furnace annealing treatment on the silicon chip injected with the Si+ at the temperature of between 700 and 1,100 DEG C for 1 to 20 hours in the protective atmosphere of nitrogen or argon, and obtaining a silicon material with D1 line strong luminescence at room temperature. The method has the remarkable advantages that: the silicon material with stable and high-efficiency luminescence at room temperature is obtained by a low-cost and simple-process ion implantation technique; meanwhile, the material is completely compatible with the conventional Si-based CMOS integrated circuit and lays a foundation for realizing full silicon chip photoelectron-microelectron integrated engineering.

Description

Technical field: [0001] The invention relates to a method for preparing semiconductor photoelectric materials, in particular to the use of Si + Self-implantation forms room temperature efficient D in crystalline silicon 1 The new technology of line luminescence belongs to the field of optoelectronic technology. Background technique [0002] Si is the best candidate material to realize optoelectronics-microelectronics integration engineering. Because in addition to the advantages of easy compatibility and integration, Si-based optoelectronic materials also have the characteristics of low cost, high reliability, and strong functional scalability compared with other optoelectronic materials. However, silicon is a semiconductor with an indirect band gap, that is, the space wave vectors at the bottom of the conduction band and the top of the valence band are different. Therefore, in order to satisfy the conservation of momentum, the recombination of electrons from the bottom o...

Claims

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Application Information

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IPC IPC(8): H01L21/265H01L21/324
Inventor 杨宇王茺韦冬李亮熊飞
Owner YUNNAN UNIV
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