Micro semiconductor laser diode capable of realizing high power single-mode output and manufacturing method thereof

A laser diode and semiconductor technology, applied to the structure of the active region, the structure of the optical resonant cavity, etc., can solve the problems of increasing the length of the diode, reducing the cost of laser diode production, etc. Die output, the effect of increasing the number of qualified chip products

Inactive Publication Date: 2010-12-15
厉巧云 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this will increase the length of the diode, making it difficult to effectively apply to some industries that require strict miniaturization of the laser size.
Moreover, since the increase in the length of the diode will reduce the number of products that can be achieved on the same size substrate, the production cost of the laser diode will also increase accordingly

Method used

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  • Micro semiconductor laser diode capable of realizing high power single-mode output and manufacturing method thereof
  • Micro semiconductor laser diode capable of realizing high power single-mode output and manufacturing method thereof
  • Micro semiconductor laser diode capable of realizing high power single-mode output and manufacturing method thereof

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Embodiment approach 1

[0049] Figure 4-6 The non-rectangular resonator semiconductor laser diode of the first embodiment of the present invention will be described. see Figure 4 In the top view of the chip surface, the two ends of the resonant cavity and the parts close to the vertical end face have a rectangular structure, and the middle part of the resonant cavity has a non-rectangular structure.

[0050] Figure 5 for along Figure 4 The cross-section of the dotted line A-A in the figure shows a single-channel waveguide structure. According to the wavelength selection, the width of the waveguide channel can only support single-mode transmission, such as an infrared laser with a wavelength of 800nm, and the width of the ridge bottom 571 can be 2.5-4 μm. refer to Figure 5 , including an n-type AlGaAs buffer layer 52, an n-type AlGaAs cladding layer 53, an AlGaAs light-emitting layer 54, a first p-type AlGaAs cladding layer 55, and a p-type InGaP etch stop layer 56 from the n-type GaAs substr...

Embodiment approach 2

[0060] In the second embodiment of the present invention, the two ends of the resonant cavity of the semiconductor laser diode chip and the adjacent part of the vertical end face are rectangular single-channel waveguide structures, and the middle part of the resonant cavity is as follows: Figure 14 A non-rectangular single-channel waveguide structure is shown, but with a larger width chosen to increase the cross-sectional area and thus increase the peak optical output power. The manufacturing method of the non-rectangular resonator semiconductor laser diode of the second embodiment of the present invention is similar to the manufacturing method of the non-rectangular resonator semiconductor laser diode of the first embodiment, and the difference is to select such as Figure 15 The mask pattern shown is used for photolithography and subsequent etching processes.

Embodiment approach 3

[0062] In the third embodiment of the present invention, the two ends of the resonant cavity of the semiconductor laser diode chip and the adjacent part of the vertical end face are rectangular single-channel waveguide structures, and the middle part of the resonant cavity is as follows: Figure 16 In the shown non-rectangular three-channel waveguide structure, each waveguide channel generates photons after introducing current, oscillates and amplifies in its own waveguide, and merges in the common single-channel waveguide part to increase the optical output power. The manufacturing method of the non-rectangular resonator semiconductor laser diode of the third embodiment of the present invention is similar to the manufacturing method of the non-rectangular resonator semiconductor laser diode of the first embodiment, and the difference is to select such as Figure 17 The mask pattern shown is used for photolithography and subsequent etching processes.

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Abstract

The invention provides a micro semiconductor laser diode capable of realizing high power single-mode output and a manufacturing method thereof and particularly discloses a semiconductor laser diode with a non-rectangular resonant cavity and a manufacturing method thereof. The parts, near the vertical light extraction end faces, at the two ends of the resonant cavity are of rectangular single-channel waveguide structures. The middle part of the resonant cavity comprises the waveguide structure with at least a channel. The light peak output power of the laser diode is increased under the condition of keeping the total straight length of the resonant cavity and the volume of the laser diode invariant, so that the chip product rates on the substrates with the same size are increased, thus lowering the product cost and providing a solution for the special application of high-density integrated circuits of light and ultra-small integration space but with high light power.

Description

technical field [0001] The invention relates to a micro-semiconductor laser diode capable of realizing high-power single-mode output and a manufacturing method thereof. Background technique [0002] Semiconductor laser diodes have been widely used in many fields of modern life, including data storage, laser measurement, sensors, laser printing, optical communication, etc. According to the different PN junction materials and structures of diodes, semiconductor laser diodes can be divided into homojunction, single heterojunction (SH), double heterojunction (DH) and other laser diodes. The output of semiconductor laser diodes can be divided into single-mode laser and multi-mode laser. The advantage of single-mode lasers is that there is no mode competition, and the stability, coherence, and beam quality of the laser are very good. [0003] A ridge waveguide structure is used in a double heterojunction laser diode to achieve single-mode laser output. This ridge-type double he...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/32
Inventor 厉巧云梁文
Owner 厉巧云
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