Method for preparing tellurium nanocrystals

A tellurium nano and crystal technology, applied in the field of semiconductor materials, achieves the effect of simple process, stable reaction system and good uniformity

Inactive Publication Date: 2012-03-28
NANTONG JINNIU MACHINERY MFR
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of semiconductor tellurium nan...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] To prepare spherical tellurium nanocrystal particles, the specific steps are:

[0017] (1) Dissolve orthotelluric acid in water to form a concentration of 6×10 -2 mol / L aqueous solution of orthotelluric acid;

[0018] (2) 60 millimoles of hydrazine monohydrate are added to 40 milliliters of orthotelluric acid aqueous solution to form a black suspension solution;

[0019] (3) Pour the black suspension solution into a hydrothermal reaction kettle and react at 100°C for 24 hours;

[0020] (4) After the hydrothermal reaction is completed, the reactant is centrifuged to obtain a solid product; the solid product is washed with distilled water and ethanol in sequence, and dried to obtain spherical tellurium nanocrystal particles.

Embodiment 2

[0022] Preparation of olive-shaped tellurium nanocrystal particles, the specific steps are:

[0023] (1) Dissolve orthotelluric acid in water to form a concentration of 5×10 -2 mol / L aqueous solution of orthotelluric acid;

[0024] (2) 80 millimoles of hydrazine monohydrate are added to 40 milliliters of orthotelluric acid aqueous solution to form a black suspension solution;

[0025] (3) Pour the black suspension solution into a hydrothermal reaction kettle, and react at 120° C. for 12 hours;

[0026] (4) After the hydrothermal reaction is completed, the reactant is centrifuged to obtain a solid product; the solid product is washed with distilled water and ethanol in sequence, and dried to obtain olive-shaped tellurium nanocrystal particles.

Embodiment 3

[0028] To prepare short tellurium nanorods, the specific steps are:

[0029] (1) Dissolve orthotelluric acid in water to form a concentration of 4×10 -2 mol / L aqueous solution of orthotelluric acid;

[0030] (2) 40 millimoles of hydrazine monohydrate are added to 40 milliliters of orthotelluric acid aqueous solution to form a black suspension solution;

[0031] (3) Pour the black suspension solution into a hydrothermal reaction kettle, and react at 110° C. for 18 hours;

[0032] (4) After the hydrothermal reaction is completed, the reactant is centrifuged to obtain a solid product; the solid product is washed with distilled water and ethanol in sequence, and dried to obtain short tellurium nanorods.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for preparing tellurium nanocrystals. The conventional method cannot effectively control the morphologies of the tellurium nanocrystals. The method comprises the following steps of: preparing aqueous solution of tellurium acid according to the morphology required by the prepared tellurium nanocrystals; adding a reducing agent hydrazine monohydrate into the aqueous solution of the tellurium acid to form black suspension solution, and pouring into a hydrothermal reactor for hydrothermal reaction at the temperature of between 100 and 120 DEG C for 12 to 24 hours; and centrifuging to separate the reaction products, and washing and drying the solid product to obtain the tellurium nanocrystals. The morphologies of the tellurium nanocrystals can be controlled bychanging the concentration of the aqueous solution of tellurium acid in the reaction system, so the nanocrystals in different morphologies such as nanoparticles, short nanorods and long nanorods can be respectively obtained. The method has the advantages of simple process and stable reaction system; and the obtained tellurium nanocrystals have better uniformity and the morphologies of the obtained tellurium nanocrystals can be effectively controlled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a preparation method of tellurium nanocrystals. Background technique [0002] Due to their unique optical, electrical, magnetic, sensitive and mechanical properties, nanomaterials have potential application prospects in the field of nano-device construction, and have increasingly attracted widespread attention from scientists from all over the world. In particular, the properties of nanomaterials are not only related to their composition and size, but also closely related to their morphology. Therefore, by controlling the morphology of nanocrystals, their physical and chemical properties can be adjusted. [0003] Tellurium is a semiconductor with a narrow band gap (0.35eV). It has attracted great attention due to its many excellent properties, and is widely used as thermoelectric materials, piezoelectric materials, photoconductive materials and catalyt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B19/02
Inventor 袁求理聂秋林
Owner NANTONG JINNIU MACHINERY MFR
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products