Purification method of high-purity sub-nanometer silicon carbide micro powder

A technology for nano-silicon carbide and silicon carbide micropowder, which is applied in the purification field of preparing high-purity sub-nano silicon carbide micropowder with D50 value ≤ 0.5 μm, can solve the problem that the classification and purification methods are not reasonable, the particle size control method is single and inflexible, and the materials cannot reach Purity and other issues, to achieve the effect of favoring purification purity, reducing waste generation, and low production cost

Active Publication Date: 2010-12-29
PINGDINGSHAN YICHENG NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The classification and purification methods in the prior art are not reasonable enough, and more wastes are likely to be generated during the purification process. The preparation of silicon carbide powder with a D50 value of ≤0.5 μm is complicated to operate, and the purity of the material cannot reach 99.9%. The particle size control method is relatively single inflexible

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A method for purifying high-purity sub-nano silicon carbide micropowder. After mixing the tailing slurry of ≥4μm and the raw material of silicon carbide powder of 50 The value is 0.5μm and the purity is 99.99%. The method is as follows:

[0033] 1. Classified processing:

[0034] Step 1. Collect the tailing slurry ≥4μm formed in the process of producing silicon carbide powder into the reaction tank of silicon carbide raw material <4μm, and then add 0.5kg sodium hydroxide (liquid concentration 30%) per cubic meter And 1kg of sodium oleate, stir well and let stand for 24 hours to form a sediment at the bottom of the tank;

[0035] Step 2: Send the slurry in the upper layer of the reaction tank to the material purification tank, add a 40% sulfuric acid solution to the material purification tank, and adjust the pH of the slurry to 3 by adding the amount to the material purification tank. Let it stand for 2 hours, and extract the supernatant. ;

[0036] Step 3. Fill the material pu...

Embodiment 2

[0049] A method for purifying high-purity sub-nano silicon carbide micropowder. After mixing the tailing slurry of ≥4μm and the raw material of silicon carbide powder of 50 The value is 0.4μm and the purity is 99.995%. The method is as follows:

[0050] 1. Classified processing:

[0051] Step 1. Collect the tailing slurry ≥4μm formed in the process of producing silicon carbide powder into the reaction tank of silicon carbide raw material <4μm, and then add 0.8kg potassium hydroxide per cubic meter, and the liquid concentration is 45 % And 1.25kg of sulfonate, after stirring evenly, let it stand for 80 hours to form a sediment at the bottom of the tank;

[0052] Step 2. Send the slurry in the upper layer of the reaction tank to the material collection container tank, add a 60% sulfuric acid solution to the material purification tank, add the amount to adjust the pH of the slurry to 3.5, let it stand for 8 hours, and extract the supernatant liquid;

[0053] Step 3: Fill the material pu...

Embodiment 3

[0066] A method for purifying high-purity sub-nano silicon carbide powder. The tailing slurry of ≥4μm and the raw material of silicon carbide powder of 50 The value is 0.3μm and the purity is 99.999%. The method is as follows:

[0067] 1. Classified processing:

[0068] Step 1. Collect the tailing slurry ≥4μm formed in the process of producing silicon carbide powder into the reaction tank of silicon carbide raw material <4μm, and then add 1kg of barium hydroxide or ammonia water and 1.5kg of ten per cubic meter. Octaenamine acetate, after stirring evenly, let it stand for 110 hours to form a sediment at the bottom of the tank;

[0069] Step 2. Send the slurry in the upper layer of the reaction tank to the material collection container tank, add a 90% sulfuric acid solution to the material purification tank, and adjust the pH value of the slurry to 4 by adding the amount to the material purification tank. Let it stand for 12 hours and extract the supernatant. liquid;

[0070] Step 3. ...

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PUM

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Abstract

The invention discloses a purification method of high-purity sub-nanometer silicon carbide micro powder, relating to a grading purification method of silicon carbide micro powder. The purification method is as follows: firstly, grading slurry; secondly, adding deionized water, blowing agent and dispersing agent into grade slurry; thirdly, using aeration equipment to finish physical purification of the slurry; fourthly, adding sulfuric acid, hydrochloric acid, hydrofluoric acid, deionized water and alkaline substances to the slurry after physical purification to carry out chemical purification; and finally maximally stoving until the water content is less than or equal to 0.2%, thus completing purification to obtain the product. The purification method has the beneficial effect of maximally reducing the generation of waste during purification process, the method for regulating and controlling granularity is more flexible, wherein the purification of Sic can reach more than 99.9%, the value of D50 is less than or equal to 0.5 mu m, therefore the silicon carbide micro powder prepared by the method can completely meet the requirement of high-purity sub-nanometer silicon carbide micro powder used for pressureless sintering ceremics.

Description

Technical field [0001] The invention relates to a method for grading and purifying silicon carbide micropowder, specifically a preparation D 50 Purification method of high-purity sub-nano silicon carbide powder with value ≤0.5μm. Background technique [0002] As the raw material of pressureless sintered ceramics, high-purity sub-nano silicon carbide powder has the characteristics of high purity (Sic≥99.9%) and fine particle size (silicon carbide powder D50 value≤0.5μm) because of its wear resistance and corrosion resistance , High temperature, high strength, high thermal conductivity and other excellent properties, has been widely used in aerospace, petrochemical, mechanical and electronic fields. At present, many domestic manufacturers and scientific research institutions have formed a preliminary test plan for the development of high-purity sub-nano silicon carbide micropowder. In the classification method, the micropowder median diameter silicon carbide micropowder is added to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 杨正宏朱春燕张强
Owner PINGDINGSHAN YICHENG NEW MATERIAL
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