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Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask

A phase shift mask and manufacturing method technology, which can be applied in the photoengraving process of the pattern surface, the manufacture of semiconductor/solid-state devices, instruments, etc., and can solve the problems of difficult developing conditions and the like

Inactive Publication Date: 2015-04-08
ULVAC COATING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as photomasks become smaller and smaller, it is extremely difficult to study only exposure conditions, development conditions, etc., and people are looking forward to new technologies that can make photomasks even smaller

Method used

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  • Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask
  • Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask
  • Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask

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no. 1 approach

[0036] figure 1 It is a process drawing for demonstrating the manufacturing method of the phase shift mask described in 1st Embodiment of this invention. The phase shift mask in this embodiment is a mask for patterning the glass substrate for flat panel displays, for example. As will be mentioned later, when patterning a glass substrate using this mask, the light used in the exposure process is composite light that combines i-line, h-line, and g-line having different wavelengths.

[0037]First, a light-shielding layer 11 is formed on a transparent substrate 10 ( figure 1 Middle (A)).

[0038] As the transparent substrate 10 , a material that is transparent and has good optical isotropy is used, for example, a quartz glass substrate can be used. The size of the transparent substrate 10 is not particularly limited, and can be appropriately selected according to the size of the substrate (for example, a substrate for a flat panel display or a semiconductor substrate) during th...

no. 2 approach

[0078] image 3 It is a process drawing for demonstrating the manufacturing method of the phase shift mask mentioned in 2nd Embodiment of this invention. Also, yes image 3 neutralize figure 1 Corresponding parts are denoted by the same symbols, and detailed description thereof will be omitted.

[0079] The phase shift mask 2 in this embodiment ( image 3 In (J)), a positioning mark for positioning is formed on the peripheral portion, and the positioning mark is formed by the light-shielding layer 11P2. Next, a method of manufacturing the phase shift mask 2 will be described.

[0080] First, a light-shielding layer 11 is formed on a transparent substrate 10 ( image 3 Middle (A)). Next, a photoresist film layer 12 is formed on the light shielding layer 11 ( image 3 Middle (B)). The photoresist film layer 12 can be positive or negative. Next, the photoresist film layer 12 is subjected to exposure and development processing, thereby forming a resist pattern 12P2 on the...

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Abstract

The present invention provides a method for manufacturing a phase shift mask, a method for manufacturing a flat panel display, and a phase shift mask, wherein a thin and high precision exposure pattern may be formed by means of the phase shift mask. In a first embodiment of the invention, the phase shift mask (1) includes a phase shift layer (13P1), capable of making any light which wavelength is more than 300nm and less than 500nm to generate a phase difference of 180 DEG. Thereby, when the light of the wavelength range is used for exposing, the phase of the light will be reversed in the phase shift layer to form an area having minimum light intensity, such that the exposure pattern is more clear. In an environment containing more than 40% and less than 90% of nitriding gas and more than 10% and less than 35% of oxidizing gas, the phase shift layer (13P) is formed by sputtering a target made of chrome material.

Description

technical field [0001] The invention relates to a manufacturing method of a phase shift mask, a manufacturing method of a flat panel display and the phase shift mask, by which fine and high-precision exposure patterns can be formed. Background technique [0002] In recent years, for flat panel displays, the line width has been made finer by improving the precision of pattern formation, and thus the image quality can be greatly improved. As the line width accuracy of the photomask and the line width accuracy when transferred to the substrate become finer, the gap between the photomask and the substrate during exposure becomes smaller. Since the size of the glass substrate used in the flat panel display is more than 300mm, the curvature of the glass substrate or the surface roughness will become larger, so that the image quality is easily affected by the depth of field. [0003] For the exposure when making flat panel displays, due to the large size of the glass substrate, pe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/32H01L21/3105C23C14/06G03F1/29G03F1/68
CPCG03F1/26G03F1/50H01L21/0274H01L21/0337
Inventor 影山景弘中村大介
Owner ULVAC COATING
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