Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sensor, table and lithographic apparatus

A sensor and sensing device technology, applied in the field of sensors, can solve problems such as immersion liquid evaporation

Inactive Publication Date: 2011-01-26
ASML NETHERLANDS BV
View PDF17 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While such systems improve substrate temperature control and handling, evaporation of the immersion liquid can still occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sensor, table and lithographic apparatus
  • Sensor, table and lithographic apparatus
  • Sensor, table and lithographic apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] figure 1 A lithographic apparatus according to an embodiment of the invention is schematically shown. The lithography equipment includes:

[0042] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or deep ultraviolet (DUV) radiation);

[0043] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM for precisely positioning the patterning device MA according to determined parameters;

[0044] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and associated with a second positioning device configured to precisely position the substrate according to determined parameters PW connected; and

[0045] - A projection system (eg a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A sensor, a table and a lithographic apparatus are disclosed. The sensor for an immersion system apparatus comprises: a sensing device, a transparent layer and an opaque patterning layer. The sensing device is configured to sense a property of a beam of radiation. The transparent layer is configured to allow the passage of a beam of radiation therethrough. The transparent layer covers the sensingdevice. The opaque patterning layer is configured to impart a pattern to the beam of radiation. In the patterning layer is an opening in which is located an infilling material. The infilling materialis transparent to the beam of radiation and has a similar refractive index to that of the transparent layer.

Description

technical field [0001] The invention relates to a sensor for an immersion system device, a table comprising the sensor and a lithographic device comprising the sensor. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred by imaging the pattern onto a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are successively patter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/7085G03F7/70341G03F7/70616H01L21/0274
Inventor H·W·M·范布尔J·T·布洛克惠斯基V·普洛斯因特索夫S·范德克拉夫N·V·德兹沃姆基娜
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com