Method for preparing V2O5-adding NiCuZn ferrites

A technology of V2O5 and ferrite, applied in the field of preparation of NiCuZn ferrite, can solve the problems of difficult to obtain key breakthroughs, high technical content, and difficult process.

Inactive Publication Date: 2011-02-16
ZHONGBEI UNIV
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  • Abstract
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Problems solved by technology

[0003] Low-temperature sintered laminated chip inductors are the key technology to realize the development of passive connectors to planar chips. Due to the high technical content and difficult process in the field of chip inductors, it is difficult to obtain key breakthroughs. NiCuZn as the material of inductors The preparation of ferrite must be sintered at <900°C to ensure that the quality of the inner conductor material Ag does not change. At present, there are many methods for preparing inductive device materials, but most of them have some shortcomings and disadvantages

Method used

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  • Method for preparing V2O5-adding NiCuZn ferrites
  • Method for preparing V2O5-adding NiCuZn ferrites
  • Method for preparing V2O5-adding NiCuZn ferrites

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Embodiment Construction

[0106] The present invention will be further described below in conjunction with accompanying drawing:

[0107] figure 1 As shown, it is the state diagram for the preparation of the ferrite precursor, and the positions of each part must be correct and operated in sequence.

[0108] The amount required for preparation is determined according to a pre-set range in grams, milliliters, centimeters 3 is the unit of measurement.

[0109] The synthesis of the NiCuZn ferrite oxalate precursor is carried out in a four-necked flask, and is completed under electric heating, water bath, stirring, water cycle condensation, and argon protection, and a display screen 2 is provided on the electric heating stirrer 1 , indicator light 3, control switch 4, electric heating mixer 1 top is water bathtub 5, is water bath water 20 in the water bathtub 5, puts four-necked flask 6 in water bathtub 5, and water bath water 20 soaks 4 of the internal volume of the four-necked flask / 5; the upper part ...

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Abstract

The invention relates to a method for preparing V2O5-adding NiCuZn ferrites, which is characterized in that a ferrite precursor is synthesized in a four-mouth flask under the conditions of water bath, electric heating, stirring, water-cycling condensation and argon protection by using nickel sulfate hydrate, copper sulfate hydrate, zinc sulfate hydrate and ferrous sulphate hydrate as raw materials, using ammonium oxalate as precipitating agent, using polyvinyl alcohol as dispersant, using ethanol as detergent, using vanadium oxide as sintering agent and using argon as protective gas. The particular steps are as follows: preparing blended solution firstly; filtering, washing and drying so as to obtain precursor powder; calcining the precursor powder at a temperature of 800 DEG C; then adding vanadium oxide as sintering agent and deionized water into the precursor powder; carrying out ball-milling on the obtained mixture; pressing the mixture subjected to ball-milling into circular cake-shaped products; finally, carrying out low-temperature sintering on the circular cake-shaped products at a temperature of 870 DEG C so as to obtain the final product. The preparation method is advanced, and grains are uniform and stable in chemical and physical properties, therefore, the preparation method is an ideal method for preparing the NiCuZn ferrites.

Description

technical field [0001] The present invention relates to a kind of adding V 2 o 5 The invention discloses a method for preparing NiCuZn ferrite, which belongs to the technical field of soft magnetic material preparation methods and applications. Background technique [0002] NiCuZn ferrite sintered at low temperature is a kind of soft magnetic material, which has the advantages of high resistivity, low loss and wide application frequency band. It is the preferred material for manufacturing multilayer chip inductors; the key technology of multilayer chip inductors is to realize The magnetic dielectric material and the inner conductor are co-sintered, and the ferrite in it is required to be sintered at a low temperature while having high performance. The multilayer chip inductor often uses silver Ag with good conductivity as the inner conductor, and the melting point of Ag is 961°C, so It is required that the sintering temperature of NiCuZn ferrite should be lower than 900°C ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/622C04B35/26
Inventor 赵宇宏侯华杨玲郭志宏原梅妮庞尔楠赵宇辉牛晓峰
Owner ZHONGBEI UNIV
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