Carbon chemical adsorption method for preparing graphene film by using atomic layer deposition
A graphene thin film and atomic layer deposition technology, which is applied in gaseous chemical plating, coating, metal material coating technology, etc., can solve the problems that do not meet the requirements of ALD growth, and achieve simple and easy adsorption methods and stable carbon The effect of chemical adsorption
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Embodiment 1
[0020] A carbon chemical adsorption method for preparing graphene film by atomic layer deposition, comprising the steps of:
[0021] Step 101, treating the surface of the (0001) crystal plane of the silicon carbide substrate terminated with carbon atoms with hydrogen for 20 minutes to form a C-H bond on the surface of the silicon carbide substrate, such as figure 1 As shown in figure a;
[0022] Step 102, placing the silicon carbide substrate after the hydrogenation treatment in the reaction chamber of the atomic layer deposition equipment, passing argon gas into the reaction chamber of the atomic layer deposition device to clean the reaction chamber; Nitrogen methane gas is irradiated with ultraviolet light at the same time to decompose diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is: Diazomethane can also be decomposed by low-temperature heating, the heating temperature is 200°C-500°C, and the c...
Embodiment 2
[0025] Step 101, treating the surface of the (0001) crystal plane of the silicon carbide substrate terminated with carbon atoms with hydrogen for 20 minutes to form a C-H bond on the surface of the silicon carbide substrate, such as figure 1 As shown in figure a;
[0026] Step 102, placing the silicon carbide substrate after the hydrogenation treatment in the reaction chamber of the atomic layer deposition equipment, passing argon gas into the reaction chamber of the atomic layer deposition device to clean the reaction chamber; and then passing ethylene into the reaction chamber Ketone gas is irradiated with ultraviolet light or heated at low temperature to decompose ketene, and the decomposition products have unbonded electrons. The chemical expression of ketene decomposition is: like figure 1 As shown in Figure b;
[0027] The decomposition product carbene (: CH2) undergoes an insertion reaction with the silicon carbide substrate, and the chemical expression of the reacti...
Embodiment 3
[0029] Step 101, fixing the (0001) crystal plane silicon carbide substrate terminated with carbon atoms in the reaction chamber of the atomic layer deposition equipment;
[0030] Step 102, passing argon gas into the reaction chamber of the atomic layer deposition equipment for 5 minutes, and exhausting the gas in the reaction chamber;
[0031] Step 103, feed a methyl iodide gas into the reaction chamber of the atomic layer deposition equipment, such as figure 2 As shown in the figure a, and irradiated with sunlight, methyl iodide is decomposed, and the expression of the decomposition is: like figure 2 As shown in figure b in the middle; the product of the decomposition of methyl iodide and the surface of the silicon carbide substrate form bonds through carbon atoms to form a methyl structure to achieve stable chemical adsorption, such as figure 2 As shown in Figure c.
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