Bonding agent for wax processing of wafer and preparation method thereof

A technology of adhesive and wafer, applied in the directions of wax adhesive, shellac adhesive, rosin adhesive, etc., can solve the problems of inability to meet wafer processing, poor selectivity, low melting point, etc., and improve wafer processing efficiency , easy to store, simple preparation method

Inactive Publication Date: 2011-03-09
苏州天科合达蓝光半导体有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of polishing the wafer or processing other crystal planes, the semiconductor bonding wax used has a low melting point, most of which are between 45-70°C, and

Method used

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  • Bonding agent for wax processing of wafer and preparation method thereof
  • Bonding agent for wax processing of wafer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Paraffin, rosin, and shellac are placed in a heatable container with an electric furnace for heating and melting in a mass ratio of 20:75:5. Heating for 30 minutes, so that the three solids are evenly melted into a liquid state, stirring is required during the melting process, and the mixture is uniform. The uniformly stirred melt is left to stratify, and the upper layer is a transparent liquid after stratification. Fill a large container with deionized water and add a little ice to make an ice-water mixture.

[0022] The mold for preparing the adhesive is cylindrical, and the diameter is selected according to the needs of wafer processing. Put the sealed end of the mold into the ice-water mixture, inject the liquid mixed uniform raw materials into the mold, let it cool and let it solidify (device such as figure 1 shown). The melting point of the prepared binder is between 70°C and 90°C.

Embodiment 2

[0024] Paraffin, rosin, and shellac are placed in a heatable container with an electric furnace for heating and melting in a mass ratio of 50:40:10. Heating for 35 minutes, so that the three solids are uniformly melted into a liquid state, stirring is required during the melting process, and the mixture is uniform. The uniformly stirred melt is left to stratify, and the upper layer is a transparent liquid after stratification. Fill a large container with deionized water and add a little ice to make an ice-water mixture.

[0025] The mold for preparing the adhesive is cylindrical, and the diameter is selected according to the needs of wafer processing. Put the sealed end of the mold into the ice-water mixture, inject the liquid mixed uniform raw materials into the mold, let it cool and let it solidify (device such as figure 1 shown). The melting point of the prepared binder is between 90°C and 110°C.

Embodiment 3

[0027] Paraffin, rosin, and shellac are placed in a heatable container with an electric furnace for heating and melting in a mass ratio of 30:50:20. Heating for 40 minutes, so that the three solids are uniformly melted into a liquid state, stirring is required during the melting process, and the mixture is uniform. The uniformly stirred melt is left to stratify, and the upper layer is a transparent liquid after stratification. Fill a large container with deionized water and add a little ice to make an ice-water mixture.

[0028] The mold for preparing the adhesive is cylindrical, and the diameter is selected according to the needs of wafer processing. Put the sealed end of the mold into the ice-water mixture, inject the liquid mixed uniform raw materials into the mold, let it cool and let it solidify (device such as figure 1 shown). The melting point of the prepared binder is between 110°C and 130°C.

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Abstract

The invention discloses a bonding agent for wax processing of a wafer and a preparation method thereof. The bonding agent mainly comprises paraffin wax, rosin and shellac, wherein the paraffin wax, the rosin and the shellac are proportioned according to the weight ratio of 20-50: 40-75: 5-20. The bonding agent can regulate the melting point by changing the adding proportion of raw materials, and the melting point can be generally controlled within the range of 70 DEG C-130 DEG C, in particular to 80 DEG C-120 DEG C. The preparation method of the bonding agent for was processing of the wafer comprises the step of utilizing a die to prepare the melted bonding agent which is uniformly stirred into a finished product bonding agent with a certain shape. The bonding agent utilizes the die for processing and molding and can meet various application needs in the actual production by changing the size and the shape of a model when being applied in the wafer processing process, and be easy to store.

Description

[0001] Zhang He 1 Hu Boqing 3 Lin Jingjing 3 Huang Qingsong 3 Liu Jinyi 2 Wang Ximing 2 Peng Tonghua 2 Chen Xiaolong 1，2，3 [0002] 1) Suzhou Tianke Heda Blu-ray Semiconductor Co., Ltd. [0003] 2) Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. [0004] 3) Institute of Physics, Chinese Academy of Sciences technical field [0005] The invention relates to an adhesive and a preparation method thereof, in particular to an adhesive for processing wafers with wax and a preparation method thereof. Background technique [0006] A variety of binders can be used in the wafer processing process, but due to the large defects, the application value of large-scale production cannot be obtained, such as inorganic binders, although they are resistant to high temperature and aging, they are resistant to acid and alkali. Poor performance; organic binder, although the performance is very good, but because of the high price, it cannot be used commercially. [0007] At present, ...

Claims

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Application Information

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IPC IPC(8): C09J193/04C09J193/02C09J191/06H01L21/00
Inventor 张贺胡伯清林菁菁黄青松刘金义王锡铭彭同华陈小龙
Owner 苏州天科合达蓝光半导体有限公司
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