Method for preparing GaN base LED (Light Emitting Diode)

Abstract

The invention provides a method for preparing a GaN base LED (Light Emitting Diode), which comprises the following steps of: firstly, growing a GaN base LED epitaxial wafer on an oSiC substrate according to a conventional process; cleaning and removing grease and an oxide layer from the surface of the P-GaN layer; then, preparing a bonding layer on the P-GaN layer; bonding the bonding layer on the Si or Cu substrate; reducing the thickness of the SiC substrate into a range between 25mum and 35mum by a mechanical reducing and grinding mode; then, cutting the SiC substrate into a lattice structure by adopting a laser cutting mode, wherein the cutting depth reaches the inside of the N-GaN layer; then, soaking the SiC substrate into a corroding liquid for corroding the N-GaN layer at the interface part so that the SiC substrate separated into single blocks on the N-GaN layer is disconnected from the N-GaN layer. The method for preparing the GaN base LED is simple and can be easily realized, the influence on the performance of devices is small in the whole process, the advantage of high-quality GaN crystal growing on the SiC substrate can be ensured, meanwhile, the N-GaN surface with the peeled SiC substrate has the coarsening effect, and the heat radiation and the light taking efficiency of the made LED devices can be improved.

Description

technical field [0001] The invention relates to a preparation method of a GaN-based LED with a vertical structure, belonging to the technical field of optoelectronic devices. Background technique [0002] In the early 1990s, the third-generation wide-bandgap semiconductor materials represented by nitrides made a historic breakthrough, and green, blue and purple LEDs were successfully prepared on GaN-based materials, making LED white lighting possible. . From the first GaN LED die in 1971 to 1994, GaN HEMTs appeared with high electron mobility blue-light GaN-based diodes. GaN semiconductor materials are developing very rapidly, and the driving force of market demand is very strong. They will replace incandescent lamps and fluorescent lamps as lighting Market leading, with huge room for development. [0003] Due to the high pressure of nitrogen when GaN grows at high temperature, it is difficult to obtain large-sized GaN bulk single crystal materials. At present, most GaN ep...

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Problems solved by technology

[0006] Aiming at the problems of low light extraction efficiency of GaN-based LEDs on SiC substrates and difficulty in removing SiC substrates by wet and dry methods, the present invention provides a SiC substrate stripping removal that is simple and easy to implement, and can improve LED light extraction efficiency after stripping SiC Method for preparing GaN-based LEDs

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