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TFT-LCD array substrate and manufacturing method thereof

An array substrate and substrate technology, applied in the field of TFT-LCD array substrate and its manufacturing, can solve the problems of immature process technology and high production cost, and achieve the goal of eliminating step defects, improving yield, and reducing feedthrough voltage Effect

Active Publication Date: 2011-04-13
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, the prior art proposes a variety of solutions to increase the aperture ratio, one of which is to use resin passivation layer technology, which can greatly increase the aperture ratio, but this technology has high production costs and requires a large process change. And the technology is immature

Method used

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  • TFT-LCD array substrate and manufacturing method thereof
  • TFT-LCD array substrate and manufacturing method thereof
  • TFT-LCD array substrate and manufacturing method thereof

Examples

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preparation example Construction

[0079] (5) The present invention adopts the existing mature preparation technology, the process changes little, not only the production cost is low, but also the product quality can be guaranteed, and has wide application prospect.

[0080] It should be noted that the above technical solution is only a structural form of the TFT-LCD array substrate of the present invention, and in practical application, similar or similar structures can be formed by changing materials or adjusting process flow. For example, the coating of the color resin layer and the black matrix of the present invention can be deposited by means of inkjet or the like. For another example, the aforementioned third patterning can be completed through a secondary patterning process using a common mask.

[0081] Figure 13 It is a schematic diagram of another structural form of the TFT-LCD array substrate of the present invention, which is figure 1 Sectional view of A1-A1 in the middle. This embodiment is a m...

no. 3 example

[0113] exist Figure 16 On the basis of the technical solution of the illustrated embodiment, the third embodiment of the TFT-LCD array substrate manufacturing method of the present invention can also be formed by canceling the passivation layer, including:

[0114] Step 31, using magnetron sputtering or thermal evaporation to deposit a gate metal film on the substrate, and using a common mask to form a pattern including gate electrodes and gate lines through a patterning process;

[0115] Step 32, forming a colored resin layer composed of a red resin pattern, a blue resin pattern and a green resin pattern, and the thickness of the colored resin layer used as an insulating layer is 1.5 μm to 3 μm;

[0116] Step 33, using the plasma-enhanced chemical vapor deposition method to sequentially deposit the semiconductor film and the doped semiconductor film; using magnetron sputtering or thermal evaporation to deposit the source-drain metal film;

[0117] Step 34, coating a layer o...

no. 4 example

[0121] exist Figure 17 On the basis of the technical solution of the illustrated embodiment, the fourth embodiment of the TFT-LCD array substrate manufacturing method of the present invention can also be formed by canceling the passivation layer, including:

[0122] Step 41, using magnetron sputtering or thermal evaporation to deposit a gate metal film on the substrate, and using a common mask to form a pattern including gate electrodes and gate lines through a patterning process;

[0123] Step 42, forming a colored resin layer composed of a red resin pattern, a blue resin pattern and a green resin pattern, and the thickness of the colored resin layer used as a gate insulating layer is 1.5 μm to 3 μm;

[0124] Step 43, using a plasma-enhanced chemical vapor deposition method to sequentially deposit a semiconductor thin film and a doped semiconductor thin film;

[0125] Step 44, using a common mask to form a pattern including the active layer through a patterning process;

...

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Abstract

The invention relates to a TFT-LCD (Thin Film Transistor-liquid crystal display) array substrate and a manufacturing method thereof. The array substrate comprises a grid line, a dada line, a pixel electrode, a thin film transistor and a black matrix, wherein the grid line, the dada line, the pixel electrode and the thin film transistor are formed on the substrate; and the black matrix is used for shielding the grid line, the dada line and the thin film transistor. The manufacturing method comprises the following steps of: forming a gate electrode and a grid line graph; forming a color resin layer as an insulating layer; forming an active layer, the data line, a source electrode, a drain electrode and a TFT channel graph; forming a black matrix graph, wherein the black matrix is positioned above the grid line, the data line, the source electrode and a TFT channel area; forming a through hole graph of a passivation layer; and forming a pixel electrode graph, wherein the edge of the pixel electrode is overlapped with the black matrix. In the invention, the black matrix is arranged on the array substrate, thus the aperture opening ratio is enlarged, the graph quality is increased, and the production time and the production cost of the TFT-LCD are integrally reduced.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. The TFT-LCD of the existing structure is mainly composed of an array substrate and a color filter substrate that are boxed together and the liquid crystal is sandwiched between them. On the array substrate, gate lines and data lines that cross each other and define the pixel area are formed. Each pixel A thin film transistor and a pixel electrode are arranged in the area, and a black matrix, a color resin pattern and a common electrode are formed on the color filter substrate, and the black matrix is ​​used to block the area ...

Claims

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Application Information

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IPC IPC(8): G02F1/1362G02F1/1368H01L21/82
Inventor 明星周伟峰郭建赵鑫张文余
Owner BOE TECH GRP CO LTD
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