Method for amplifying process window of PMOS (P-channel metal oxide semiconductor) core device

Abstract

The invention discloses a method for amplifying the process window of a PMOS (P-channel metal oxide semiconductor) core device, which comprises: carrying out a first ion injection course on the formed polycrystalline silicon layer after a gate oxide layer and a polycrystalline silicon layer are successively formed on a substrate; etching the gate oxide layer and the polycrystalline silicon layer to form a grid and form first side walls on both sides of the grid; carrying out a shallow ion injection process to form a shallow doped drain region and form a second side wall on the external side of the first side wall; carrying out a deep source / drain region ion injection process, wherein the deep source / drain region ion injection process comprises a first source / drain region ion injection course and a second source / drain region ion injection course; depositing a high-stress nitride layer respectively on a grid region, a source region and a drain region; and carrying out an ohmic contact process and a top metal wiring process. The method provided by the invention is used for amplifying the process window of the PMOS core device, enhancing the yield of the product and saving the processcost.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for increasing the process window (Process Window) of a PMOS core device. Background technique [0002] At present, with the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, chips are developing towards higher component density and high integration. The manufacturing technology has entered the 65nm or even 45nm process node, and the minimum feature size of the gate width has reached 45nm or smaller. [0003] In the manufacturing process of complementary metal oxide semiconductor (CMOS) devices, some processes will affect the performance of metal oxide semiconductor field effect transistors (MOSFET), especially the performance of p-channel metal oxide semiconductor (PMOS) core components. It will cause a great impact, so th...

AI Technical Summary

Problems solved by technology

[0027]However, the ion implantation process and the RTA process used in the above-mentioned PMOS manufacturing process usually reduce the performance of MOSFET

For example, when performing the above-mentioned deep source / drain region ion implantation process, since three ion implantation processes need to be performed continuously, it is easy to make the dose of source-drain ion implantation too high; Generally, they are relatively small, so the ion diffusion speed is relatively fast, so that the density of the doped ions is prone to over-doping (over-run) phenomenon during the subsequent RTA process, thus making it comparable to the corresponding N-type MOSFET (NMOSFET) Compared with the corresponding P-type MOSFET (PMOSFET), the values ​​of the saturation current (Idsat) and the off-leakage current (Ioff) of the PMOS core device formed by the above process will greatly exceed the standard floating range, resulting in the PMOS core device. The process window (Process Window) is too small, which greatly reduces the performance of the PMOS core device

Images