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Method for preventing corrosion of tungsten plug

A manufacturing method and technology of metal wires, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as tungsten plug corrosion, and achieve the effect of short time and simple process method

Inactive Publication Date: 2011-05-04
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The problem solved by the present invention is the defect that the tungsten plug is corroded by the existing manufacturing method

Method used

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  • Method for preventing corrosion of tungsten plug
  • Method for preventing corrosion of tungsten plug
  • Method for preventing corrosion of tungsten plug

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Reference attached figure 2 As shown, the manufacturing method of a semiconductor device provided by this embodiment includes: step S100, providing a semiconductor substrate with tungsten plugs formed thereon; step S110, sequentially forming a metal wire layer on the semiconductor substrate and a patterned photoresist layer; step S120, using the patterned photoresist layer as a mask, etching the metal wire layer to form a metal wire, and the metal wire is located on the tungsten plug but not completely covered Tungsten plug; Step S130, using arc light or ultraviolet light to irradiate the metal wire to eliminate the positive charge on the metal wire; Step S140, using an ashing process to remove the photoresist layer; Step S150, cleaning the metal leads and tungsten plug surfaces.

[0023] Reference attached Figure 3a As shown, a semiconductor substrate 200 is provided, and a tungsten plug 201 is formed in the semiconductor substrate. The structure of the semiconduct...

Embodiment 2

[0035] This embodiment provides a method for preventing corrosion of tungsten plugs, comprising: providing a semiconductor substrate with tungsten plugs formed, the tungsten plugs and the tungsten plugs formed on the tungsten plugs but not completely covering the tungsten plugs The metal wires are interconnected; the metal wires are irradiated with arc light or ultraviolet light to eliminate the positive charges on the metal wires.

[0036] The structure of the semiconductor substrate and the manufacturing method of the metal wire layer refer to Embodiment 1, which will not be repeated here.

[0037] Using the method for preventing corrosion of tungsten plugs, due to the use of arc light or ultraviolet light irradiation, the positive charges on the metal wires are removed. Therefore, in the subsequent cleaning process, corrosion on the metal wires and the tungsten plugs is avoided. The potential difference avoids the occurrence of electrochemical reaction and prevents the tung...

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Abstract

The invention relates to a method for preventing the corrosion of a tungsten plug. The method comprises the following steps of: providing a semiconductor substrate with a tungsten plug, wherein the tungsten plug is connected with a metal lead which is formed on the tungsten plug and incompletely covers the tungsten plug; and illuminating the metal lead by adopting arc light or ultraviolet light until positive charges on the metal lead are eliminated. After the method for preventing the corrosion of a tungsten plug is adopted, the positive charges on the metal lead are removed by adopting the arc light or ultraviolet light illumination method so as to avoid the potential difference between the metal lead and the tungsten plug, avoid the generation of an electrochemical reaction and avoid corroding the tungsten plug in the following cleaning process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preventing corrosion of tungsten plugs. Background technique [0002] With the continuous miniaturization of the line width of semiconductor components, high-speed, multi-functional, high component integration / low power consumption and low-cost extremely large-scale integrated circuit chips can be mass-produced. Due to the miniaturization of semiconductor elements and the increase in integration, the internal metal wiring structure is constantly increasing, so that the surface of the chip cannot provide enough surface area to accommodate the increasing number of metal wiring. In order to solve this problem, a multilayer metal wiring structure is proposed, which becomes a necessary method for the integrated circuit manufacturing technology. [0003] In the manufacturing process of the multi-layer metal wiring structure, after the metal tungsten pl...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 王心
Owner SEMICON MFG INT (SHANGHAI) CORP
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