Metal selenide thermoelectric material for intermediate temperate and preparation process thereof

A technology of metal selenide and thermoelectric materials, which is applied in the field of metal selenide thermoelectric materials and preparation technology for medium temperature, can solve the problems of low productivity, high equipment requirements, and limited production scale, and achieve the effect of low cost and simple process

Inactive Publication Date: 2011-05-11
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since In 2 Se 3 The base material is anisotropic, so by changing the preparation process, for example, the Boerchmann method, the zone melting method, and the hot extrusion method can obtain obvious anisotropic materials, but the production scale is limited
Preparation of In 2 Se 3 Base films and nanowires not only require high equipment and low productivity, but also the application of the obtained materials is difficult, so the production of low-dimensional materials and their devices has great limitations

Method used

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  • Metal selenide thermoelectric material for intermediate temperate and preparation process thereof
  • Metal selenide thermoelectric material for intermediate temperate and preparation process thereof
  • Metal selenide thermoelectric material for intermediate temperate and preparation process thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0015] According to the chemical formula In 2 Se 3 The two elements In and Se with a purity greater than 99.999wt.% are weighed and placed in vacuum quartz tubes respectively. The smelting synthesis temperature is 1000-1100° C., and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled to 600-650°C in the furnace, and then quenched in water. The quenched ingot is crushed and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering. The sintering temperature is 550-650° C., the sintering pressure is 40-60 MPa, and the holding time is 8-12 minutes. The sintered bulk material is annealed in a vacuum environment for 20-28 hours, and the annealing temperature is 180-200°C.

Embodiment 2

[0017] The elemental metal Ag with a mole fraction of 0.05 was used to replace In in an equimolar manner. 2 Se 3 In element in. First according to the chemical formula In 1.95 Ag 0.05 Se 3 The three elements In, Ag and Se with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. The smelting synthesis temperature is 1000-1100° C., and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled to 600-650°C in the furnace, and then quenched in water. The quenched ingot is crushed and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering. The sintering temperature is 550-650° C., the sintering pressure is 40-60 MPa, and the holding time is 8-12 minutes. The sintered bulk material is annealed in a vacuum environment for 20-28 hours, and th...

Embodiment 3

[0019] The elemental metal Ag with a mole fraction of 0.15 was used to replace In in an equimolar manner 2 Se 3 In element in. First according to the chemical formula In 1.85 Ag 0.15 Se 3 The three elements In, Ag and Se with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. The smelting synthesis temperature is 1000-1100° C., and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled to 600-650°C in the furnace, and then quenched in water. The quenched ingot is crushed and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering. The sintering temperature is 550-650° C., the sintering pressure is 40-60 MPa, and the holding time is 8-12 minutes. The sintered block material is annealed in a vacuum environment for 20-28 hours, and th...

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Abstract

The invention provides a metal selenide thermoelectric material for intermediate temperate and a preparation process thereof, which relates to the field of thermoelectric materials. The design point is as follows: the chemical formula of the thermoelectric material is InxAgySe3, wherein x + y=2, 0.05<= y <=0.25. The preparation process comprises the following steps: putting elemental In, Ag and Se into a vacuum quartz tube; synthesizing for 20-28 hours at the temperature of 1000-1100 DEG C; cooling the InxAgySe3 cast ingot in a furnace to 600-650 DEG C, and then, immediately quenching in water; crushing and ball-milling the quenched InxAgySe3 cast ingot; carrying out spark plasma sintering to prepare a block, wherein the sintering temperature is 550-650 DEG C, the sintering pressure is 40-60MPa, and the holding time is 8-12 minutes; coating a sodium silicate concentrated solution on the surface of the sintered block material; drying; and then, annealing for 20-28 hours in the vacuum quartz tube, wherein the annealing temperature is 180-200 DEG C. The material provided by the invention is prepared by using a conventional powder metallurgy method, thus the process is simple; the transition metal element Ag is used for replacing the In element in the In2Se3 thermoelectric alloy in an equimolar mode, thus the cost is lower; and the material has environment-friendly characteristics and does not have noise, thus the material is suitable for being used as an environment-friendly energy material.

Description

technical field [0001] The invention relates to a thermoelectric material, which is a metal selenide thermoelectric material for medium temperature and a preparation process thereof. Background technique [0002] Thermoelectric material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilization power supply, and small power supply devices in remote areas. [0003] The comprehensive performance of thermoelectric materials is described by the dimensionless thermoelectric figure of merit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C29/00C22C1/02
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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