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Clapboard adsorption device and method for removing boron impurities in chlorosilane system

An adsorption device and chlorosilane technology, applied in halosilane, separation methods, chemical instruments and methods, etc., to achieve the effects of simplifying the process flow, reducing production costs, and improving the efficiency of impurity removal

Active Publication Date: 2011-05-18
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem of how to effectively remove boron impurities currently faced by the domestic polysilicon industry, the present invention proposes a process and a device for removing boron impurity compounds in chlorosilanes with a partition adsorption rectification device, with the purpose of obtaining polysilicon with relatively high purity. Reduce energy consumption and equipment investment while producing chlorohydrogen silicon products

Method used

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  • Clapboard adsorption device and method for removing boron impurities in chlorosilane system
  • Clapboard adsorption device and method for removing boron impurities in chlorosilane system

Examples

Experimental program
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example 1

[0022] The chlorosilane system contains 95.0% trichlorosilane, 2.0% silicon tetrachloride, 2.0% dichlorodihydrosilicon, and 1.0% boron trichloride. The throughput of the feedstock was 378.8 kg / hr, which was converted to a molar flow rate of 2.8 Kmol / hr. The tower adsorption section adopts ion exchange resin adsorbent with high adsorption capacity. The main tower adopts metal mesh corrugated packing.

[0023] The pressure at the top of the tower is 300Kpa, the temperature at the top of the tower is 49.2°C, the thermal condition of the feed is 30.0°C bubble point feed, the top of the tower is 0.06Kmol / hr, the side line is 1.99Kmol / hr, and the tower kettle is 0.74Kmol / hr. The condenser The heat load is 0.0120M*kcal / hr, the heat load of the reboiler is 0.0154M*kcal / hr, the number of theoretical plates in the common rectifying section is 19, the number of theoretical plates in the common stripping section is 9, and the number of theoretical plates in the tower adsorption section i...

example 2

[0026] The chlorosilane system contains 98% trichlorosilane, 0.8% silicon tetrachloride, 0.7% dichlorodihydrogen silicon, and 0.5% boron trichloride, and the processing capacity of the raw material is 379.1kg / hr, which is converted into The molar flow rate was 2.8 Kmol / hr. The tower adsorption section adopts zeolite molecular sieve adsorbent.

[0027] The pressure at the top of the tower is 400Kpa, the temperature at the top of the tower is 70.8°C, the thermal condition of the feed is 30.0°C bubble point feed, the top of the tower is taken 0.06Kmol / hr, the side line is taken out 2.0Kmol / hr, the tower kettle is taken out 0.74Kmol / hr, the condenser The heat load is 0.0153M*kcal / hr, and the heat load of the reboiler is 0.0199M*kcal / hr. The number of theoretical plates in the common rectifying section is 19, the number of theoretical plates in the common stripping section is 9, and the number of theoretical plates in the tower adsorption section is 10. The number of theoretical b...

example 3

[0030] The chlorosilane system contains 95.0% trichlorosilane, 2.0% silicon tetrachloride, 2.0% dichlorodihydrosilicon, and 1.0% boron trichloride. The throughput of the feedstock was 378.8 kg / hr, which was converted to a molar flow rate of 2.8 Kmol / hr. The tower adsorption section uses silica gel as the adsorbent.

[0031] The pressure at the top of the tower is 500Kpa, the temperature at the top of the tower is 65.3°C, the thermal condition of the feed is 30.0°C, the bubble point feed, the top of the tower is 0.06Kmol / hr, the side line is 1.99Kmol / hr, and the tower kettle is 0.74Kmol / hr. The condenser The heat load is 0.0143M*kcal / hr, and the heat load of the reboiler is 0.0197M*kcal / hr. The number of theoretical plates in the common rectifying section is 19, the number of theoretical plates in the common stripping section is 9, and the number of theoretical plates in the tower adsorption section is 10. The number of theoretical boards in the outgoing section is 20, and the...

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Abstract

The invention relates to a clapboard adsorption device and method for removing boron impurities in a chlorosilane system. The device is divided into four areas by a clapboard which has the same height as a tower type adsorption section and is placed in the middle of the tower: a public rectifying section (1), a tower type adsorption section (2), a side withdrawing section (3) and a public stripping section (4), wherein an adsorbent is filled in the tower type adsorption section (2). A chlorosilane material (5) containing impurities of boron compounds is fed at the middle part of the tower type adsorption section, light components (6) are obtained from the tower top, the purified product trichlorosilane (7) is obtained from the side withdrawing section, heavy components (8) are obtained from the tower bottom, and the operation pressure of the tower is 300-500 KPa. Through the process, the removal rate of the boron impurities is 80%, and the energy consumption is reduced by 60-80%. Compared with the former boron removal process, the flow is greatly simplified, and the energy consumption and equipment expenses are remarkably reduced. Based on effective removal of boron, the key components are separated, the separated components enter corresponding units of polycrystalline silicon production respectively, and the production cost is reduced.

Description

technical field [0001] The invention relates to a method and a device for adsorption by a separator, which removes boron-containing impurity compounds in a chlorosilane system and improves the impurity removal efficiency. And while removing the impurity boron, the separation of the key components is realized, and the trichlorosilane with higher purity is obtained. The process simplifies the process of removing boron from chlorosilane, and reduces energy consumption and equipment costs. Background technique [0002] The development of the semiconductor and solar cell industries has made the production of raw material polysilicon a hot industry. At the same time, the requirements for the purity of polysilicon are getting higher and higher. How to effectively remove impurities in polysilicon has become a difficult problem for my country's polysilicon industry. In particular, boron-containing compounds have a wide variety of complex components, and the boiling point is very cl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D3/32B01D53/04C01B33/107
Inventor 黄国强石秋玲王红星华超王国峰姚帅鹏
Owner TIANJIN UNIV
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