High-quality gallium nitride light-emitting diode

Abstract

The invention provides a gallium nitride light-emitting diode which comprises a substrate, a gallium nitride nucleating layer, a buffer layer, an n type contact layer, an n type insertion layer, an activated light-emitting layer, a p type electronic barrier layer, a p type contact layer, a cathode and an anode, wherein the gallium nitride nucleating layer is made on the substrate; the buffer layer is made on the gallium nitride nucleating layer; the n type contact layer is made on the buffer layer, one side of the upper surface of the n type contact layer has an etched platform surface; the n type insertion layer is made inside one side of the n type contact layer, which is far away from the platform surface, and the n type contact layer is arranged on the n type insertion layer; the activated light-emitting layer is made on the n type contact layer, which is far away from the platform surface, and covers part of surface of the n type contact layer; the p type electronic barrier layer is made on the activated light-emitting layer; the p type contact layer is made on the p type electronic barrier layer and consists of p type gallium nitride; the cathode is made on the platform surface of the n type contact layer; and the anode is made on the p type contact layer, thus the gallium nitride series light-emitting diode is made.

Description

technical field [0001] The invention relates to a gallium nitride (GaN)-based light-emitting diode, in particular to a gallium-nitride-based light-emitting diode with a low-temperature n-type insertion layer. Background technique [0002] At present, III-V semiconductor optoelectronic materials are known as the third generation semiconductor materials. GaN-based light-emitting diodes have become the focus of industry research because they can produce light-emitting diodes (referred to as "LEDs") of various colors (especially blue or violet light that requires a high energy gap) by controlling the composition of materials. [0003] The epitaxial growth of GaN-based semiconductor materials or devices currently mainly adopts MOCVD technology. In the process of growing nitride semiconductors (GaN, AlN, InN and their alloy nitrides) using MOCVD technology, sapphire is usually used as the substrate for heteroepitaxy because there is no substrate material that matches the GaN latt...

AI Technical Summary

Problems solved by technology

Although many patents mention the use of intercalated layers to improve stress distribution, they are all high-temperature intercalated layers.

Images