Method for manufacturing high-temperature resistant transparent electric heating film

A production method, electric heating film technology, applied in the direction of electric heating devices, ohmic resistance heating, electrical components, etc., can solve the problems of fast decay of electric heating film at high temperature, affect practicability, and not resistant to dry burning, etc., and achieve slow decay and use temperature range Wide, the effect of ensuring the stability of the film resistance

Active Publication Date: 2011-05-18
宁波高新区健坤电热技术有限公司
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems existing in the existing electrothermal film and its manufacturing method, to screen compounds with special characteristics as additives, and to provide a method for manufacturing a hi

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  • Method for manufacturing high-temperature resistant transparent electric heating film
  • Method for manufacturing high-temperature resistant transparent electric heating film
  • Method for manufacturing high-temperature resistant transparent electric heating film

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Embodiment Construction

[0045] A method for manufacturing a high-temperature-resistant transparent electrothermal film of the present invention is to select an insulating substrate, modify the surface of the substrate, make electrodes on the surface of the electrothermal film, and age the electrothermal film. The specific process is: preparing a surface modification solution, purifying the substrate materials, surface modification, making electrodes, energized aging,

[0046] 1. Preparation of Surface Modification Solution

[0047] (1) The formula component weight ratio (unit: gram) is:

[0048] Tin tetrachloride (SnCl 4 ·5H 2 O) 300...Main ingredients

[0049] Ruthenium trichloride (RuCl 3 ) 3...high temperature resistance stabilizer

[0050] Bismuth Hydroxide (Bi(OH) 3 ) 4...high temperature resistance stabilizer

[0051] Barium titanate (BaTiO 3 ) 5... High voltage resistance stabilizer

[0052] Fluoboric acid (HBF 4 ) 2... dopant

[0053] Proper amount of hydrofluoric acid (HF)...doping ...

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Abstract

The invention relates to a method for manufacturing a high-temperature resistant transparent electric heating film. The method comprises the following steps of: preparing a surface modification solution; purifying a substrate; carrying out surface modification; manufacturing an electrode; and carrying out an electrifying and aging procedure. The method is characterized in that the surface medication solution comprises the following components: 300-500g of stannic chloride as a main material, 3-5g of ruthenium trichloride, 4-7g of bismuth hydroxide as a high-temperature resistance stabilizer, 4-7g of barium titanate as a high-voltage resistance stabilizer, 2-4g of fluoboric acid as a doping agent, a proper quantity of hydrofluoric acid as a doping cosolvent, a proper quantity of hydrochloric acid as a cosolvent and 300-500g of absolute alcohol as a solvent. The method has the advantages of high temperature resistance, antioxidation, dry burning in air, wide using temperature range, long service life, slow attenuation and wide application. The method is suitable for manufacturing a high-temperature resistant transparent electric heating film.

Description

technical field [0001] The invention belongs to an ohmic resistance heating film characterized by material composition or material properties, and in particular relates to a manufacturing method of a high-temperature resistant transparent electric heating film capable of working at high temperature. Background technique [0002] Tin oxide (S n o 2 ) and its doping compounds are the first semiconductor surface electrothermal materials put into commercial use. In the past two decades, semiconductor electrothermal film technology has developed extremely rapidly. The reason is that its excellent photoelectric performance and energy-saving effect have led to its widespread applications and urgent needs. At present, the semiconductor electrothermal film materials mainly include: tin oxide (S n o 2 ), indium oxide (I u2 o 3 ), cadmium stannate (Cd 2 SnO 4 ), zinc oxide (Z n O) and its doping system. Their common disadvantages are: poor stability at high temperature and fa...

Claims

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Application Information

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IPC IPC(8): H05B3/34H05B3/10C03C17/22C04B41/50C04B41/85
Inventor 马秀芝龚旭杨利东张扬华
Owner 宁波高新区健坤电热技术有限公司
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