Method for manufacturing high-temperature resistant transparent electric heating film

Abstract

The invention relates to a method for manufacturing a high-temperature resistant transparent electric heating film. The method comprises the following steps of: preparing a surface modification solution; purifying a substrate; carrying out surface modification; manufacturing an electrode; and carrying out an electrifying and aging procedure. The method is characterized in that the surface medication solution comprises the following components: 300-500g of stannic chloride as a main material, 3-5g of ruthenium trichloride, 4-7g of bismuth hydroxide as a high-temperature resistance stabilizer, 4-7g of barium titanate as a high-voltage resistance stabilizer, 2-4g of fluoboric acid as a doping agent, a proper quantity of hydrofluoric acid as a doping cosolvent, a proper quantity of hydrochloric acid as a cosolvent and 300-500g of absolute alcohol as a solvent. The method has the advantages of high temperature resistance, antioxidation, dry burning in air, wide using temperature range, long service life, slow attenuation and wide application. The method is suitable for manufacturing a high-temperature resistant transparent electric heating film.

Description

technical field [0001] The invention belongs to an ohmic resistance heating film characterized by material composition or material properties, and in particular relates to a manufacturing method of a high-temperature resistant transparent electric heating film capable of working at high temperature. Background technique [0002] Tin oxide (S n o 2 ) and its doping compounds are the first semiconductor surface electrothermal materials put into commercial use. In the past two decades, semiconductor electrothermal film technology has developed extremely rapidly. The reason is that its excellent photoelectric performance and energy-saving effect have led to its widespread applications and urgent needs. At present, the semiconductor electrothermal film materials mainly include: tin oxide (S n o 2 ), indium oxide (I u2 o 3 ), cadmium stannate (Cd 2 SnO 4 ), zinc oxide (Z n O) and its doping system. Their common disadvantages are: poor stability at high temperature and fa...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems existing in the existing electrothermal film and its manufacturing method, to screen compounds with special characteristics as additives, and to provide a method for manufacturing a high-temperature-resistant and transparent electrothermal film, so as to overcome the high-temperature attenuation of the electrothermal film in the prior art. Problems affecting practicality such as fast speed, short life, and intolerance to dry burning

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