Gallium-arsenide-based multi-junction isotope micro cells
A gallium arsenide-based, isotope technology, applied in the field of gallium arsenide-based multi-junction isotope microbatteries, can solve the problems of insufficiency, thick PN junction, immature growth process, etc. Effective collection thickness effect
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[0022] A gallium arsenide-based multi-junction isotope micro-battery of the present invention, such as figure 1 As shown, it includes three single-junction GaAs-based isotope microcells, and every two single-junction GaAs-based isotope microcells are connected by a tunnel junction. The depletion region and surface of GaAs-based multi-junction isotope microcells Using SiO 2 Passivation; the specific processing steps are as follows:
[0023] 1) Load the clean GaAs substrate into the molecular beam epitaxy sample chamber, bake at 200°C for 4 hours, and then send it to the buffer chamber for growth;
[0024] 2) Before the growth, the GaAs substrate is heated to 600°C to remove the surface oxide layer (the removal of the oxide layer can be judged by the high-energy electron diffraction pattern);
[0025] 3) Using MBE (molecular beam epitaxy) technology to sequentially grow single-junction gallium arsenide-based isotope microcells 5, tunnel junction 4, single-junction gallium arse...
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